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Global warming requires the development of environmentally friendly science and technology and the creation of business. In recent years, research into clean energy device materials that can obtain safe energy by utilizing natural energy such as sunlight has become active. Wide-gap semiconductor, TiO2 and SrTiO3 (STO), can be doped with various elements (C, N, F, P, S, Li, Na, K, Mg, Ca, Ba, etc.) for photocatalytic applications. In addition, visible light of sunlight can be effectively utilized. In this study, we report on the properties of highly nitrogen doped STO (HSTO) films. The films were deposited by RF magnetron sputtering on quartz or Pt/quartz substrates in a nitrogen atmosphere using an STO target. As a result, NSTO with a nitrogen concentration of 9.5 atom% was obtained, and the band gap decreased from 3.5 eV of STO to 1.9 eV. The perovskite structure was maintained, and optical properties were obtained in the visible light region.

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キーワード: Nitrogen doping, SrTiO3 (STO), Nitrogen doped STO, Photocatalyst , Reactive magnetron sputtering, Semiconductor

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会議: The International Conference on the Science and Technology for Advanced Ceramics (STAC) - Data Driven Materials Research for Electronics. 2024 (2024-02-29)

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原稿種別: 論文以外のデータ

MDR DOI: https://doi.org/10.48505/nims.4587

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更新時刻: 2024-07-09 17:25:10 +0900

MDRでの公開時刻: 2024-07-09 17:25:11 +0900