# Reduction of dislocation density in α-Ga2O3 epilayers via rapid growth at low temperatures by halide vapor phase epitaxy

https://mdr.nims.go.jp/datasets/89b0a845-c6a6-4ca9-a1c2-eb11ab66a858

## File

- [Maskless_230605_clean.pdf](https://mdr.nims.go.jp/filesets/c44aeb04-3ad2-4f5d-919f-68263b41a43e/download) ([Detail](https://mdr.nims.go.jp/filesets/c44aeb04-3ad2-4f5d-919f-68263b41a43e.md))

## Id

89b0a845-c6a6-4ca9-a1c2-eb11ab66a858

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-01-07T05:48:30.777307Z

## Updated at

2024-06-22T23:30:11.582796Z

## Published at

2024-06-22T23:30:12.062611Z

## Doi

https://doi.org/10.48505/nims.4397

## First published url

https://doi.org/10.35848/1882-0786/acddca

## Date published

2023-06-01

## Recorded date published

2023-6-1

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Reduction of dislocation density in α-Ga2O3 epilayers via rapid growth at
    low temperatures by halide vapor phase epitaxy
  title_type: original
  lang: en

## Description

- description: We demonstrate that dislocation density in α-Ga2O3 epilayers is remarkably
    reduced via rapid growth at low temperatures by halide vapor phase epitaxy. The
    dislocation density was 4 x 108 cm-2 in an α-Ga2O3 epilayer grown on a (0001)
    sapphire substrate at a high growth rate of 34 μm/h and a low temperature of 463°C.
    The dislocation density was approximately 1/100 of that in an α-Ga2O3 layer grown
    with no measures. It is likely that three-dimensional surface morphology formed
    during the low-temperature rapid growth enhanced the bending of the dislocations
    to increase the chance of pair annihilation.
  description_type: abstract
  lang: eng

## Creator

- name: Yuichi Oshima
  role: author
  orcid: https://orcid.org/0000-0001-8293-4891
  organization: National Institute for Materials Science
- name: Hiroyuki Ando
  role: author
- name: Takashi Shinohe
  role: author

## Contact agent



## Publisher

organization: IOP Publishing

## Managing organization



## Keyword

- subject: α-Ga2O3
  schema: not_defined
- subject: dislocation
  schema: not_defined
- subject: HVPE
  schema: not_defined

## Rights

- description: "© 2023 The Japan Society of Applied Physics<br>\r\nThis is an author-created,
    un-copyedited version of an article accepted for publication/published\r\nin Applied
    Physics Express. IOP Publishing Ltd is not responsible for any errors or omissions
    in this version of the manuscript or\r\nany version derived from it. The Version
    of Record is available online at https://doi.org/10.35848/1882-0786/acddca ."
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo

start_date: 2023-06-23
end_date: 2024-06-23

## Journal

- title: Applied Physics Express
  issn: '18820778'
  volume: '16'
  issue: '6'
  start_page: 65501
  end_page: 65501

## Conference



## Related item



## Funding



## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: c44aeb04-3ad2-4f5d-919f-68263b41a43e
  filename: Maskless_230605_clean.pdf
  content_type: application/pdf
  size: 636979
  md5: 560fcb2955a04b003e2f9eb93d41d090

## Thumbnail

fileset_id: c44aeb04-3ad2-4f5d-919f-68263b41a43e
filename: Maskless_230605_clean.pdf