# High thermoelectric performance of p-type Fe            <sub>2</sub>            V            <sub>0.8</sub>            Mn            <sub>0.2</sub>            Al Heusler alloy thin films grown on insulating oxide substrates

https://mdr.nims.go.jp/datasets/8938672b-53be-4b75-a1b9-783e624a121c

## File

- [STAM-High thermoelectric performance of p-type Fe2V0.8Mn0.2Al Heusler alloy thin films grown on insulating oxide substrates.pdf](https://mdr.nims.go.jp/filesets/8b709ee7-5036-4ed5-ab48-53016630d8c2/download) ([Detail](https://mdr.nims.go.jp/filesets/8b709ee7-5036-4ed5-ab48-53016630d8c2.md))

## Id

8938672b-53be-4b75-a1b9-783e624a121c

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-11-08T15:59:34.500097Z

## Updated at

2025-11-11T03:30:22.582845Z

## Published at

2025-11-11T03:22:34.697563Z

## Doi



## First published url

https://doi.org/10.1080/14686996.2025.2512705

## Date published

2025-12-31

## Recorded date published

2025-12-31

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: High thermoelectric performance of p-type Fe            <sub>2</sub>            V            <sub>0.8</sub>            Mn            <sub>0.2</sub>            Al
    Heusler alloy thin films grown on insulating oxide substrates
  title_type: original
  lang: en

## Description

- description: High-performance thermoelectric (TE) materials near room temperature
    are crucial for cooling and energy harvesting applications. This study reports
    the outstanding thermoelectric performance of p-type Mn-doped Fe2VAl Heusler alloy
    thin films, specifically Fe2V0.8Mn0.2Al, prepared using magnetron sputtering.
    These films were deposited on insulating oxide substrates to eliminate any spurious
    contributions from the substrate. Large p-type Seebeck coefficients (S) have been
    observed for all films, revealing a maximum power factor of 4.26 mWK-2m-1 at 300
    K.  This study also investigated thickness-dependent thermoelectric properties,
    with the highest power factor achieved for the 500 nm film. Films with d = 300
    nm and 500 nm exhibit weak ferromagnetism. Hall resistivity measurements evidence
    an anomalous Hall effect (AHE) for the 300 nm and 500 nm samples. The AHE is strongest
    for the 500 nm film, consistent with a magnetic enhancement of the Seebeck coefficient
    and power factor. Additionally, we synthesized Al-rich Fe2V0.9Mn0.9Al1.5 thin
    films at room temperature, 200 °C, 400 °C, and 600 °C. The film deposited at 600
    °C exhibits an exceptional figure of merit ZT ~ 0.8 and a power factor of 6.7
    mW·K-2·m-1 at room temperature, which are respectively, 4 times and 1.5 times
    larger than the best values ever reported for any bulk or thin film p-type Fe2VAl-based
    material.
  description_type: abstract
  lang: und

## Creator

- name: Rajveer Jha
  role: author
  orcid: https://orcid.org/0000-0002-9481-8705
  organization: National Institute for Materials Science
- name: Naohito Tsujii
  role: author
  orcid: https://orcid.org/0000-0002-6181-5911
  organization: National Institute for Materials Science
- name: Alexander Riss
  role: author
- name: Michael Parzer
  role: author
- name: Ernst Bauer
  role: author
- name: Takahiro Baba
  role: author
- name: Takao Mori
  role: author
  orcid: https://orcid.org/0000-0003-2682-1846
  organization: National Institute for Materials Science

## Contact agent



## Publisher

organization: Informa UK Limited

## Managing organization



## Keyword

- subject: thermoelectric
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by-nc/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Science and Technology of Advanced Materials
  issn: '14686996'
  volume: '26'
  issue: '1'
  article_number: '2512705'

## Conference



## Related item



## Funding

- funder_name: JST Mirai Program
- funder_name: Japan Society for the Promotion of Science
- funder_name: JST-Mirai Program

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: 8b709ee7-5036-4ed5-ab48-53016630d8c2
  filename: STAM-High thermoelectric performance of p-type Fe2V0.8Mn0.2Al Heusler
    alloy thin films grown on insulating oxide substrates.pdf
  content_type: application/pdf
  size: 7353548
  md5: db4fe42f2658e6db49d4cc4e59a9dcb4

## Thumbnail

fileset_id: 8b709ee7-5036-4ed5-ab48-53016630d8c2
filename: STAM-High thermoelectric performance of p-type Fe2V0.8Mn0.2Al Heusler alloy
  thin films grown on insulating oxide substrates.pdf