# Self-aligned patterning on β-Ga2O3 substrates via backside-exposure photolithography

https://mdr.nims.go.jp/datasets/8785e79a-3dee-41c4-9380-48d7bc21e802

## File

- [T. Oshima_Self-aligned patterning on β-Ga2O3 substrates via backside-exposure photolithography.docx](https://mdr.nims.go.jp/filesets/57c9e2aa-e96f-4be9-9e75-ec8019d5058a/download) ([Detail](https://mdr.nims.go.jp/filesets/57c9e2aa-e96f-4be9-9e75-ec8019d5058a.md))

## Id

8785e79a-3dee-41c4-9380-48d7bc21e802

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2023-11-17T08:02:32.968699Z

## Updated at

2024-01-24T02:20:15.413929Z

## Published at

2024-01-17T23:30:15.008197Z

## Doi

https://doi.org/10.48505/nims.4259

## First published url

https://doi.org/10.35848/1347-4065/acb0b3

## Date published

2023-01-01

## Recorded date published

2023-1-1

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Self-aligned patterning on β-Ga2O3 substrates via backside-exposure photolithography
  title_type: original
  lang: en

## Description

- description: β-Ga2O3 has not been patterned using backside-exposure lithography,
    despite its high potential applications in future power electronics and its transparency
    to conventional lithography light sources. Here, a patterned metal on a β-Ga2O3
    substrate surface was used as an embedded photomask to demonstrate the applicability
    of backside-exposure lithography to β-Ga2O3 substrates. Self-aligned photoresist
    patterning, lift-off, and etching processes were demonstrated for an AZ5214E photoresist
    in both the positive and negative processing modes. The findings suggest that
    backside-exposure photolithography is a promising fabrication approach for future
    β-Ga2O3-based devices.
  description_type: abstract
  lang: eng

## Creator

- name: Takayoshi Oshima
  role: author
  orcid: https://orcid.org/0000-0001-8550-9735
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26

## Contact agent



## Publisher

organization: IOP Publishing

## Managing organization



## Keyword

- subject: Ga2O3
  schema: not_defined
- subject: lithography
  schema: not_defined

## Rights

- description: "© 2023 The Japan Society of Applied Physics<br>This is an author-created,
    un-copyedited version of an article accepted for publication/published in Japanese
    Journal of Applied Physics. IOP Publishing Ltd is not responsible for any errors
    or omissions in this version of the manuscript or any version derived from it.
    The Version of Record is available online at  https://doi.org/10.35848/1347-4065/acb0b3."
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo

start_date: 2023-01-18
end_date: 2024-01-18

## Journal

- title: JAPANESE JOURNAL OF APPLIED PHYSICS
  issn: '00214922'
  volume: '62'
  issue: '1'
  start_page: 18004
  end_page: 18004

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## Instrument



## Instrument operator



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## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



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## Fileset

- id: 57c9e2aa-e96f-4be9-9e75-ec8019d5058a
  filename: T. Oshima_Self-aligned patterning on β-Ga2O3 substrates via backside-exposure
    photolithography.docx
  content_type: application/vnd.openxmlformats-officedocument.wordprocessingml.document
  size: 22685567
  md5: 8b96e45336a230d111232678212e159d

## Thumbnail

fileset_id: 57c9e2aa-e96f-4be9-9e75-ec8019d5058a
filename: T. Oshima_Self-aligned patterning on β-Ga2O3 substrates via backside-exposure
  photolithography.docx