# Epitaxial growth of phase-pure e-Ga2O3 by halide vapor phase epitaxy

https://mdr.nims.go.jp/datasets/872cc017-ad58-4159-b762-21f77d8f0488

## File

- [Epitaxial growth of phase-pure ε-Ga2O3 by halide vapor.pdf](https://mdr.nims.go.jp/filesets/8e7feea0-d26f-4564-a285-230a41c7e8f0/download) ([Detail](https://mdr.nims.go.jp/filesets/8e7feea0-d26f-4564-a285-230a41c7e8f0.md))

## Id

872cc017-ad58-4159-b762-21f77d8f0488

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-01-05T14:34:26.938467Z

## Updated at

2024-01-30T06:45:38.649470Z

## Published at

2024-01-30T23:30:10.224879Z

## Doi



## First published url

https://doi.org/10.1063/1.4929417

## Date published

2015-08-28

## Recorded date published

2015-8-28

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Epitaxial growth of phase-pure e-Ga2O3 by halide vapor phase epitaxy
  title_type: alternative
  lang: ja
- title: Epitaxial growth of phase-pure e-Ga2O3 by halide vapor phase epitaxy
  title_type: original
  lang: en

## Description

- description: The halide vapor phase epitaxy of e-Ga2O3 is demonstrated for the first
    time. The e-Ga2O3 films are grown on GaN (0001), AlN (0001), and b-Ga2O3 (-201)
    using gallium chloride and oxygen as precursors. X-ray omega-2theta and pole figure
    measurements reveal that the films on GaN (0001) and AlN (0001) are single-crystalline
    (0001) e-Ga2O3, while a c-plane e-Ga2O3 film grown on b-Ga2O3 (-201) exhibits
    additional misoriented domains. High temperature X-ray diffraction measurement
    reveals that the e-Ga2O3 films are stable up to approximately 700℃. The optical
    bandgap of e-Ga2O3 is determined from the transmittance spectrum to be 4.9 eV.
  description_type: abstract
  lang: eng

## Creator

- name: Yuichi Oshima
  role: author
  orcid: https://orcid.org/0000-0001-8293-4891
  organization: National Institute for Materials Science
- name: Encarnación G. Víllora
  role: author
- name: Yoshitaka Matsushita
  role: author
  orcid: https://orcid.org/0000-0002-4968-8905
  organization: National Institute for Materials Science
- name: Satoshi Yamamoto
  role: author
  orcid: https://orcid.org/0000-0002-1171-7723
  organization: National Institute for Materials Science
- name: Kiyoshi Shimamura
  role: author
  orcid: https://orcid.org/0000-0001-6502-8731
  organization: National Institute for Materials Science

## Contact agent



## Publisher

organization: AIP Publishing

## Managing organization



## Keyword

- subject: κ-Ga2O3
  schema: not_defined
- subject: ε-Ga2O3
  schema: not_defined
- subject: HVPE
  schema: not_defined

## Rights

- description: This article may be downloaded for personal use only. Any other use
    requires prior permission of the author and AIP Publishing. This article appeared
    in Yuichi Oshima et al., J. Appl. Phys. 118, 085301 (2015)  and may be found at
    https://doi.org/10.1063/1.4929417.
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin



## Embargo



## Journal

- title: JOURNAL OF APPLIED PHYSICS
  issn: '00218979'
  volume: '118'
  issue: '8'
  start_page: 85301
  end_page: 85301

## Conference



## Related item



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## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



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## Fileset

- id: 8e7feea0-d26f-4564-a285-230a41c7e8f0
  filename: Epitaxial growth of phase-pure ε-Ga2O3 by halide vapor.pdf
  content_type: application/pdf
  size: 1767555
  md5: c99e72056fb05215207b4dcb9eb528fe

## Thumbnail

fileset_id: 8e7feea0-d26f-4564-a285-230a41c7e8f0
filename: Epitaxial growth of phase-pure ε-Ga2O3 by halide vapor.pdf