# Enlightening the effect of strontium in the BiVO4–TiO2 diphase composites for dielectric devices

https://mdr.nims.go.jp/datasets/865ea19a-ec20-49ee-93dc-b1f78952bf99

## File

- [for MDR.pdf](https://mdr.nims.go.jp/filesets/c346e47a-a959-4d40-8121-fe0ef8536277/download) ([Detail](https://mdr.nims.go.jp/filesets/c346e47a-a959-4d40-8121-fe0ef8536277.md))

## Id

865ea19a-ec20-49ee-93dc-b1f78952bf99

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-07-07T01:15:54.395898Z

## Updated at

2025-07-07T07:30:28.771810Z

## Published at

2025-07-07T07:17:43.704183Z

## Doi

https://doi.org/10.48505/nims.5562

## First published url

https://doi.org/10.1007/s10854-025-15208-w

## Date published

2025-06-26

## Recorded date published

2025-6

## Resource type

journal_article

## Manuscript type

authors_original

## Collection



## Title

- title: Enlightening the effect of strontium in the BiVO4–TiO2 diphase composites
    for dielectric devices
  title_type: original
  lang: en

## Description

- description: Bi(1-2/3x)SrxVO4-TiO2(x = 0, 0.1, 0.15) composite materials were prepared
    by the conventional solid state reaction method at optimized temperature of 750℃.
    The effect of Strontium (Sr) element in the stoichiometric system of BiVO4-TiO2
    on structural phase, micro-morphology, elemental composition, band energy and
    dielectric properties were systematically analyzed for the first time. All the
    composite materials synthesized with different concentrations of Sr have two structural
    phases, monoclinic structure which belongs to BiVO4 whereas tetragonal structure
    belongs to the rutile TiO2. The relative dielectric permittivity (ɛr) gradually
    increased from ~ 61 to 122 with the increase of Sr concentration in the Bi(1-2/3x)SrxVO4-TiO2(x
    = 0, 0.1, 0.15) composite. The temperature dependent ac electrical conductivity
    (σac) of the prepared materials was estimated in the frequency range from 50 to
    3 MHz. The microwave dielectric properties of the prepared composite materials
    are examined at 3.9 GHz and results were discussed in detail for their potential
    dielectric applications.
  description_type: abstract
  lang: und

## Creator

- name: K. Yukesh Kumar
  role: author
- name: N. Sivakumar
  role: author
  orcid: https://orcid.org/0000-0002-6113-2993
- name: G. M. Bhalerao
  role: author
- name: G. Anbalagan
  role: author
- name: Kentaro Tashiro
  role: author
  orcid: https://orcid.org/0000-0001-7424-0830
- name: Ali Alsulmi
  role: author

## Contact agent



## Publisher

organization: Springer Science and Business Media LLC

## Managing organization



## Keyword

- subject: dielectric devices
  schema: not_defined

## Rights

- identifier: http://rightsstatements.org/vocab/InC/1.0/

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## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: 'Journal of Materials Science: Materials in Electronics'
  issn: '09574522'
  volume: '36'
  article_number: '1104'

## Conference



## Related item



## Funding

- identifier: RSP2025R78
  funder_name: King Saud University
- identifier: CRS/2021-22/04/627
  funder_name: UGC-DAE Consortium for Scientific Research, University Grants Commission

## Instrument



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## Specimen



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## Fileset

- id: c346e47a-a959-4d40-8121-fe0ef8536277
  filename: for MDR.pdf
  content_type: application/pdf
  size: 3273482
  md5: 8e2b9e6a8e17ceaa8be8599f0beb3b2a

## Thumbnail

fileset_id: c346e47a-a959-4d40-8121-fe0ef8536277
filename: for MDR.pdf