K. Yukesh Kumar
;
N. Sivakumar
;
G. M. Bhalerao
;
G. Anbalagan
;
Kentaro Tashiro
;
Ali Alsulmi
説明:
(abstract)Bi(1-2/3x)SrxVO4-TiO2(x = 0, 0.1, 0.15) composite materials were prepared by the conventional solid state reaction method at optimized temperature of 750℃. The effect of Strontium (Sr) element in the stoichiometric system of BiVO4-TiO2 on structural phase, micro-morphology, elemental composition, band energy and dielectric properties were systematically analyzed for the first time. All the composite materials synthesized with different concentrations of Sr have two structural phases, monoclinic structure which belongs to BiVO4 whereas tetragonal structure belongs to the rutile TiO2. The relative dielectric permittivity (ɛr) gradually increased from ~ 61 to 122 with the increase of Sr concentration in the Bi(1-2/3x)SrxVO4-TiO2(x = 0, 0.1, 0.15) composite. The temperature dependent ac electrical conductivity (σac) of the prepared materials was estimated in the frequency range from 50 to 3 MHz. The microwave dielectric properties of the prepared composite materials are examined at 3.9 GHz and results were discussed in detail for their potential dielectric applications.
権利情報:
キーワード: dielectric devices
刊行年月日: 2025-06-26
出版者: Springer Science and Business Media LLC
掲載誌:
研究助成金:
原稿種別: 査読前原稿 (Author's original)
MDR DOI: https://doi.org/10.48505/nims.5562
公開URL: https://doi.org/10.1007/s10854-025-15208-w
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更新時刻: 2025-07-07 16:30:28 +0900
MDRでの公開時刻: 2025-07-07 16:17:43 +0900
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