# High-performance β-Ga2O3 Schottky barrier diodes and metal-semiconductor field-effect transistors on a high doping level epitaxial layer

https://mdr.nims.go.jp/datasets/85fbef0c-37e6-4125-9b79-c695f3a1c566

## File

- [manuscript2022-11.pdf](https://mdr.nims.go.jp/filesets/a98fe661-800f-4e58-a439-b67baa456eef/download) ([Detail](https://mdr.nims.go.jp/filesets/a98fe661-800f-4e58-a439-b67baa456eef.md))

## Id

85fbef0c-37e6-4125-9b79-c695f3a1c566

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2023-10-04T03:05:13.408732Z

## Updated at

2025-01-04T07:30:50.568404Z

## Published at

2025-01-04T07:30:50.629237Z

## Doi

https://doi.org/10.48505/nims.4248

## First published url

https://doi.org/10.1016/j.jallcom.2023.168732

## Date published

2023-01-03

## Recorded date published

2023-4

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: High-performance β-Ga2O3 Schottky barrier diodes and metal-semiconductor
    field-effect transistors on a high doping level epitaxial layer
  title_type: original
  lang: en

## Description

- description: High-performance β-Ga2O3-based Schottky barrier diodes (SBDs) and metal-semiconductor
    field-effect transistors (MESFETs) are fabricated on a non-delta-doped high doping
    level (>1018 cm−3) epitaxial wafer. Their electrical properties and stabilities
    after annealing at 200–400 °C are investigated. The ON/OFF ratios for all the
    SBDs are over 108. The ideality factors and Schottky barrier heights for the Au/β-Ga2O3
    SBDs with different annealing temperatures range from 1.5 to 2.5 and from 0.8
    eV to 1.0 eV, respectively. There are obvious pinch-off and saturation characteristics
    for the β-Ga2O3 MESFETs. The maximum drain current (ID,max) for the as-fabricated
    β-Ga2O3 MESFET is 46.8 mA/mm at anode voltage of 2.0 V. They are much higher than
    the previously reported values of non-delta-doped and nanobelt β-Ga2O3 MESFETs.
    Threshold voltages for the β-Ga2O3 MESFETs shift to the negative direction with
    the increase of annealing temperature. This study is meaningful to push forward
    the development of β-Ga2O3-based electronic devices for practical applications.
  description_type: abstract
  lang: eng

## Creator

- name: Qihao Zhang
  role: author
- name: Jiangwei Liu
  role: author
  orcid: https://orcid.org/0000-0003-2580-7401
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Chunming Tu
  role: author
- name: Dongyuan Zhai
  role: author
- name: Min He
  role: author
- name: Jiwu Lu
  role: author

## Contact agent



## Publisher

organization: Elsevier BV

## Managing organization



## Keyword

- subject: Ga2O3
  schema: not_defined
- subject: Transistor
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by-nc-nd/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo

start_date: 2023-01-03
end_date: 2025-01-03

## Journal

- title: JOURNAL OF ALLOYS AND COMPOUNDS
  issn: '09258388'
  volume: '939'
  article_number: '168732'

## Conference



## Related item



## Funding



## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: a98fe661-800f-4e58-a439-b67baa456eef
  filename: manuscript2022-11.pdf
  content_type: application/pdf
  size: 1334985
  md5: d1f46287ddfe6f2b616f868f80f6d1b9

## Thumbnail

fileset_id: a98fe661-800f-4e58-a439-b67baa456eef
filename: manuscript2022-11.pdf