# Hydride Vapor Phase Epitaxy and characterization of High-Quality ScN epilayers

https://mdr.nims.go.jp/datasets/85061408-6340-43dc-89cc-eaec2d9422a7

## File

- [Hydride vapor phase epitaxy and characterization of highquality ScN epilayers.pdf](https://mdr.nims.go.jp/filesets/41c3245a-6800-461f-814c-d1706c891dbf/download) ([Detail](https://mdr.nims.go.jp/filesets/41c3245a-6800-461f-814c-d1706c891dbf.md))

## Id

85061408-6340-43dc-89cc-eaec2d9422a7

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-01-05T14:47:42.199815Z

## Updated at

2024-01-30T07:35:16.453120Z

## Published at

2024-01-30T23:30:14.446692Z

## Doi



## First published url

https://doi.org/10.1063/1.4871656

## Date published

2014-04-21

## Recorded date published

2014-4-21

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: HVPE法によるScNの成長と評価
  title_type: alternative
  lang: ja
- title: Hydride Vapor Phase Epitaxy and characterization of High-Quality ScN epilayers
  title_type: original
  lang: en

## Description

- description: ScClxとNH3との反応によるHVPEでScNを育成した。成長速度は、原料分圧の増大に伴って最初は増加するが、やがて減少に転じ、最大成長速度は5um/h程度であった。基板は種々試みたが、サファイア(10-12)と(10-10)を用いたときに単一配向のScN(100)および(110)がそれぞれ得られた。エピ表面は肉眼で鏡面であり、約2.1eVのバンドギャップに対応して真紅の外観を呈する。結晶性は、成長膜厚の増大に伴って大幅に改善し、ScN(110)膜の場合、X線ロッキングカーブ(XRC)半値幅は厚さ40uｍで98
    arcsecに到達した。ホール測定の結果は、従来の報告と同様に強いn型を示したが、残留キャリア濃度は1e18 - 1e20 cm-3と従来報告値より大幅に低減し、移動度もそれに伴って高い値が得られた。
  description_type: abstract
  lang: eng

## Creator

- name: Yuichi Oshima
  role: author
  orcid: https://orcid.org/0000-0001-8293-4891
- name: Encarnación G. Víllora
  role: author
- name: Kiyoshi Shimamura
  role: author
  orcid: https://orcid.org/0000-0001-6502-8731

## Contact agent



## Publisher

organization: AIP Publishing

## Managing organization



## Keyword

- subject: ScN
  schema: not_defined
- subject: HVPE
  schema: not_defined

## Rights

- description: This article may be downloaded for personal use only. Any other use
    requires prior permission of the author and AIP Publishing. This article appeared
    in Yuichi Oshima et al., J. Appl. Phys. 115, 153508 (2014) and may be found at
    https://doi.org/10.1063/1.4871656.
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: JOURNAL OF APPLIED PHYSICS
  issn: '00218979'
  volume: '115'
  issue: '15'
  start_page: 153508
  end_page: 153508

## Conference



## Related item



## Funding



## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



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## Custom property



## Fileset

- id: 41c3245a-6800-461f-814c-d1706c891dbf
  filename: Hydride vapor phase epitaxy and characterization of highquality ScN epilayers.pdf
  content_type: application/pdf
  size: 1592466
  md5: cd364c7890116e0657269e927cfab35d

## Thumbnail

fileset_id: 41c3245a-6800-461f-814c-d1706c891dbf
filename: Hydride vapor phase epitaxy and characterization of highquality ScN epilayers.pdf