# Atomic Layer Deposition of Polycrystalline Tin Dioxide Thin Films Using Liquid Bis（ethylcyclopentadienyl）tin

https://mdr.nims.go.jp/datasets/838521da-3dca-4fa5-9c4c-e254657edad8

## File

- [7612_598_RP.pdf](https://mdr.nims.go.jp/filesets/1f5bdc1a-cd1c-46c2-8617-ea7721118889/download) ([Detail](https://mdr.nims.go.jp/filesets/1f5bdc1a-cd1c-46c2-8617-ea7721118889.md))

## Id

838521da-3dca-4fa5-9c4c-e254657edad8

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-12-06T23:09:04.135561Z

## Updated at

2026-04-30T03:01:11.491392Z

## Published at

2026-06-01T05:37:33.972340Z

## Doi



## First published url

https://doi.org/10.4139/sfj.76.598

## Date published

2025-12-01

## Recorded date published

2025

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Atomic Layer Deposition of Polycrystalline Tin Dioxide Thin Films Using Liquid
    Bis（ethylcyclopentadienyl）tin
  title_type: original
  lang: en

## Description

- description: The liquid compound bis(ethylcyclopentadienyl)tin, Sn(EtCp)2 was synthesized
    and exhibits several notable characteristics, including a vapor pressure suitable
    for use as a precursor and thermal stability up to 230 °C. Using it as a precursor
    and O2 plasma as an oxdant, SnO2 thin films can be deposited by atomic layer deposition
    (ALD). A self-limiting reaction was confirmed with no nucleation delay for pulse
    times for Sn(EtCp)2 and O2 plasma of 10 s and 45 s, respectively, at a growth
    temperature of 200 °C. The growth per cycle (GPC) was 0.20 nm/cycle, which is
    higher than conventional precursors. Cross-sectional transmission electron microscopy
    revealed that the SnO2 film was uniform and polycrystalline even though it was
    deposited at 200 °C. X-ray diffraction analysis showed that the film was tetragonal
    rutile SnO2, and the (110) preferred orientation. Sn(EtCp)2 is a promising candidate
    precursor for depositing high quality SnO2 films with stoichiometric composition,
    high purity and crystallinity even at a low temperature.
  description_type: abstract
  lang: und

## Creator

- name: Fumikazu MIZUTANI
  role: author
- name: Nobutaka TAKAHASHI
  role: author
- name: Toshihide NABATAME
  role: author
  orcid: https://orcid.org/0000-0002-5973-0230

## Contact agent



## Publisher

organization: The Surface Finishing Society of Japan

## Managing organization



## Keyword

- subject: Atomic layer deposition
  schema: not_defined
- subject: PEALD
  schema: not_defined
- subject: Poricrystaline SnO2
  schema: not_defined

## Rights

- identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo

start_date: 2025-12-01
end_date: 2026-06-01

## Journal

- title: Journal of The Surface Finishing Society of Japan
  issn: '09151869'
  volume: '76'
  issue: '12'
  start_page: 598
  end_page: 602

## Conference



## Related item



## Funding



## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: 1f5bdc1a-cd1c-46c2-8617-ea7721118889
  filename: 7612_598_RP.pdf
  content_type: application/pdf
  size: 1059577
  md5: a0040aeaacbb62662c8e9762fbc71ccb

## Thumbnail

fileset_id: 1f5bdc1a-cd1c-46c2-8617-ea7721118889
filename: 7612_598_RP.pdf