# Rapid growth of a pit-free (011) β-Ga                    <sub>2</sub>                    O                    <sub>3</sub>                    homoepitaxial layer with very low residual Si and Cl concentrations by HCl-based halide vapor phase epitaxy

https://mdr.nims.go.jp/datasets/8169211e-55ce-406f-af72-c45c384d274f

## File

- [Rapid growth of a pit-free 011 -Ga2O3 homoepitaxial layer with very low residual Si and Cl concentrations by HCl-based halide vapor phase epitaxy-1.pdf](https://mdr.nims.go.jp/filesets/b5a5791e-9739-4bbf-8667-c0a41c1db68c/download) ([Detail](https://mdr.nims.go.jp/filesets/b5a5791e-9739-4bbf-8667-c0a41c1db68c.md))

## Id

8169211e-55ce-406f-af72-c45c384d274f

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2026-11-10T01:19:15.333118Z

## Updated at

2026-11-10T02:15:58.455530Z

## Published at

2026-11-10T03:36:21.289228Z

## Doi



## First published url

https://doi.org/10.1080/14686996.2026.2751773

## Date published

2026-12-31

## Recorded date published

2026-12-31

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: |-
    Rapid growth of a pit-free (011) β-Ga
                        <sub>2</sub>
                        O
                        <sub>3</sub>
                        homoepitaxial layer with very low residual Si and Cl concentrations by HCl-based halide vapor phase epitaxy
  title_type: original
  lang: en

## Description

- description: In this study, we systematically investigated the effects of O2 and
    additional HCl on impurity incorporation and combined these experiments with thermodynamic
    analysis to identify the origin of residual Si contamination. We further clarified
    the mechanism responsible for pit formation and demonstrated that both issues
    can be effectively eliminated by removing additional HCl. As a result, pit-free
    (011) β-Ga2O3 homoepitaxial layers with residual Si concentrations below the SIMS
    detection limit were grown at a high growth rate of 13 μm/h, which is comparable
    to that for HCl-assisted HVPE, without sacrificing the low residual Cl concentration.
  description_type: abstract
  lang: und

## Creator

- name: Yuichi Oshima
  role: author
  orcid: https://orcid.org/0000-0001-8293-4891
- name: Takayoshi Oshima
  role: author
  orcid: https://orcid.org/0000-0001-8550-9735

## Contact agent



## Publisher

organization: Informa UK Limited

## Managing organization



## Keyword

- subject: Ga2O3
  schema: not_defined
- subject: "(011)"
  schema: not_defined
- subject: HVPE
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin



## Embargo



## Journal

- title: Science and Technology of Advanced Materials
  issn: '14686996'
  volume: '27'
  issue: '1'
  article_number: '2751773'

## Conference



## Related item



## Funding

- identifier: JPNP22007
  funder_name: New Energy and Industrial Technology Development Organization

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: b5a5791e-9739-4bbf-8667-c0a41c1db68c
  filename: Rapid growth of a pit-free 011 -Ga2O3 homoepitaxial layer with very low
    residual Si and Cl concentrations by HCl-based halide vapor phase epitaxy-1.pdf
  content_type: application/pdf
  size: 3358008
  md5: 64f378b60e95ac84545977c1a638c9f0

## Thumbnail

fileset_id: b5a5791e-9739-4bbf-8667-c0a41c1db68c
filename: Rapid growth of a pit-free 011 -Ga2O3 homoepitaxial layer with very low
  residual Si and Cl concentrations by HCl-based halide vapor phase epitaxy-1.pdf