# English Translation of J. Surf. Anal. 24, 192-205(2018), Auger Depth Profiling Analysis of HfO2/Si Specimen Using an Ultra Low Angle Incidence Ion Beam

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## File

- [Vol.25_No.3_2019.pdf](https://mdr.nims.go.jp/filesets/b3b141fe-8bef-4d7f-8cb6-e48112108cb6/download) ([Detail](https://mdr.nims.go.jp/filesets/b3b141fe-8bef-4d7f-8cb6-e48112108cb6.md))

## Id

80d83cf9-f912-4061-a0f7-6536f01aefc2

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2021-08-19T17:43:19.757093Z

## Updated at

2022-10-02T16:48:14.514354Z

## Published at

2021-08-21T05:04:14.068253Z

## Doi



## First published url

https://doi.org/10.1384/jsa.25.209

## Date published

2020-06-04

## Recorded date published

2019

## Resource type

journal_article

## Manuscript type

authors_original

## Collection



## Title

- title: English Translation of J. Surf. Anal. 24, 192-205(2018), Auger Depth Profiling
    Analysis of HfO2/Si Specimen Using an Ultra Low Angle Incidence Ion Beam
  title_type: original
  lang: en

## Description

- description: We have investigated the Auger depth profiling analysis of HfO2 /Si
    by the glancing angle ion beam sputtering method at an incident angle of 7 degree
    from the sample surface with argon ion beam. T he depth resolutions of the O KLL
    interface profiles were 0.9 nm and 1.5 nm, at the ion beam acceleration voltage
    of 2.0 kV and 3.0 kV respectively, which were better than the depth resolutions
    at a commonly used incident angle of 51 degree. However, the ion beam induced
    reduction of HfO 2 was not suppressed by the glancing angle ion beam sputtering
    at the ion acceleration voltage of 0.5 kV, which is expected to be the lowest
    damage sputtering condition in this study. The reduction of HfO 2 due to preferential
    sputtering of oxygen was observed by the intensity ratio of O KLL and Hf NVV depth
    profiles. It was found that the ratio of preferential sputtering depends on the
    ion incidence angle and the ion acceleration voltage. Under the glancing angle
    condition, t he ratio of preferential sputtering greatly de pended on the ion
    accelerating voltage, and it was found that the lower the ion acceleration voltage
    is, the easier it is for O to be sputtered than Hf. On the other hand, under the
    commonly used incident angle conditions, the ratio of preferential sputtering
    did not depend much on the ion acceleration voltage. The dependency of the ratio
    of preferential sputtering on the ion incidence angle can be explained by the
    difference in sputtering models depend ing on the ion incidence angle. It was
    found that the O KLL depth profiles showed partial recovery of the oxygen intensity
    near the interface of HfO 2 /Si, which can be related to oxygen generated by the
    ion beam induced decomposition of the diffusion layer at the interface. In addition,
    the glancing angle ion beam enables the reduction of the effect of recoil implantation
    of Hf atoms into the Si substrate.
  description_type: abstract
  lang: en

## Creator

- name: Ogiwara, Toshiya
  role: author
  orcid: https://orcid.org/0000-0002-7376-6571
- name: Nagata, Takahiro
  role: author
  orcid: https://orcid.org/0000-0002-8591-2943
- name: Yoshikawa, Hideki
  role: author
  orcid: https://orcid.org/0000-0002-7389-8865

## Contact agent



## Publisher

organization: Surface Analysis Society of Japan

## Managing organization



## Keyword

- subject: Auger Depth Profiling Analysis
  schema: not_defined
- subject: HfO2/Si
  schema: not_defined
- subject: Ultra Low Angle Incidence Ion Beam
  schema: not_defined

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## Fileset

- id: b3b141fe-8bef-4d7f-8cb6-e48112108cb6
  filename: Vol.25_No.3_2019.pdf
  content_type: application/pdf
  size: 1357865
  md5: 5484f26e60e5213a53ab59d707b805b1

## Thumbnail

fileset_id: b3b141fe-8bef-4d7f-8cb6-e48112108cb6
filename: Vol.25_No.3_2019.pdf