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説明:

The spectrum of excitons in thin layers of semiconducting transition metal dichalcogenides (S-TMDs) is highly subject to the strong Coulomb electron-hole interaction in these materials and therefore does not follow the model system of a two-dimensional hydrogen atom. We investigate experimentally and theoretically excitonic properties in both the monolayer (ML) and the bilayer (BL) of MoSe2 encapsulated in hexagonal BN. The measured magnetic field evolutions of the re- flectance contrast spectra of the MoSe2 ML and BL allow us to determine g-factors of intralayer A and B excitons, as well as the so-called "interlayer" exciton, which we compared with the theoretical values obtained using first-principle calculations. We demonstrate that the measured experimen- tally ladder of excitonic s states in the ML can be reproduced using the k · p approach with the Rytova-Keldysh potential that describes the electron-hole interaction. The analogous calculations for the BL case require taking into account out-of-plane dielectric response of the MoSe2 BL, which is neglected for the ML.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Excitons, transition metal dichalcogenides, magnetic field

刊行年月日: 2023-02-16

出版者: IOP Publishing

掲載誌:

• 2D Materials (ISSN: 20531583) vol. 10 issue. 2 025014

研究助成金:

• JSPS KAKENHI 19H05790
• JSPS KAKENHI 20H00354
• JSPS KAKENHI 21H05233
• Narodowe Centrum Nauki 2017/27/B/ST3/00205
• Narodowe Centrum Nauki 2018/31/B/ST3/02111
• Narodowe Centrum Nauki 2021/41/N/ST3/04516

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1088/2053-1583/acbc8b

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更新時刻: 2025-02-14 12:30:52 +0900

MDRでの公開時刻: 2025-02-14 12:30:52 +0900