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The spectrum of excitons in thin layers of semiconducting transition metal dichalcogenides (S-TMDs) is highly subject to the strong Coulomb electron-hole interaction in these materials and therefore does not follow the model system of a two-dimensional hydrogen atom. We investigate experimentally and theoretically excitonic properties in both the monolayer (ML) and the bilayer (BL) of MoSe2 encapsulated in hexagonal BN. The measured magnetic field evolutions of the re- flectance contrast spectra of the MoSe2 ML and BL allow us to determine g-factors of intralayer A and B excitons, as well as the so-called "interlayer" exciton, which we compared with the theoretical values obtained using first-principle calculations. We demonstrate that the measured experimen- tally ladder of excitonic s states in the ML can be reproduced using the k · p approach with the Rytova-Keldysh potential that describes the electron-hole interaction. The analogous calculations for the BL case require taking into account out-of-plane dielectric response of the MoSe2 BL, which is neglected for the ML.

Rights:

• Creative Commons BY Attribution 4.0 International
  

Keyword: Excitons, transition metal dichalcogenides, magnetic field

Date published: 2023-02-16

Publisher: IOP Publishing

Journal:

• 2D Materials (ISSN: 20531583) vol. 10 issue. 2 025014

Funding:

• JSPS KAKENHI 19H05790
• JSPS KAKENHI 20H00354
• JSPS KAKENHI 21H05233
• Narodowe Centrum Nauki 2017/27/B/ST3/00205
• Narodowe Centrum Nauki 2018/31/B/ST3/02111
• Narodowe Centrum Nauki 2021/41/N/ST3/04516

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.1088/2053-1583/acbc8b

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Updated at: 2025-02-14 12:30:52 +0900

Published on MDR: 2025-02-14 12:30:52 +0900