# Electrical Interrogation of Thickness‐Dependent Multiferroic Phase Transitions in the 2D Antiferromagnetic Semiconductor NiI            <sub>2</sub>

https://mdr.nims.go.jp/datasets/8013f95e-bc45-41cf-9b57-6126aa84c232

## File

- [Adv Funct Materials - 2023 - Lebedev - Electrical Interrogation of Thickness‐Dependent Multiferroic Phase Transitions in.pdf](https://mdr.nims.go.jp/filesets/f6245c2f-005d-4297-91fe-6596dae0e520/download) ([Detail](https://mdr.nims.go.jp/filesets/f6245c2f-005d-4297-91fe-6596dae0e520.md))

## Id

8013f95e-bc45-41cf-9b57-6126aa84c232

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-02-13T08:31:02.490284Z

## Updated at

2025-02-14T03:31:38.168437Z

## Published at

2025-02-14T03:31:38.274883Z

## Doi



## First published url

https://doi.org/10.1002/adfm.202212568

## Date published

2023-01-12

## Recorded date published

2023-3

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Electrical Interrogation of Thickness‐Dependent Multiferroic Phase Transitions
    in the 2D Antiferromagnetic Semiconductor NiI            <sub>2</sub>
  title_type: original
  lang: en

## Description

- description: Two-dimensional (2D) van der Waals magnets are promising materials
    for various spintronics applications.1 In particular, 2D antiferromagnetic materials
    are of significant interest as they are robust with the application of external
    magnetic field, and allow for faster writing frequencies compared to ferromagnets.2
    However, the lack of macroscopic magnetization significantly complicates their
    studies, and thus magneto-electrical measurements are proposed for detection and
    control of magnetic order.2 Additionally, the majority of 2D van der Waals magnets
    are ambient reactive and insulating, which significantly complicates the device
    fabrication and limits the device geometry to two-terminal tunneling devices.
    In this manuscript, we propose a protocol for fabricating devices out of the ambient
    reactive antiferromagnet NiI2, revealing gate-tunable semiconducting transport
    down to 1.7 K. This enabled the electrical detection of the multiferroic phase
    transition down to monolayer thickness. The fabrication of ambient stable NiI2
    Hall-bar devices facilitated characterization of low temperature magnetotransport,
    revealing anisotropic magnetoresistance.
  description_type: abstract
  lang: und

## Creator

- name: Dmitry Lebedev
  role: author
- name: Jonathan Tyler Gish
  role: author
- name: Ethan Skyler Garvey
  role: author
- name: Teodor Kosev Stanev
  role: author
- name: Junhwan Choi
  role: author
- name: Leonidas Georgopoulos
  role: author
- name: Thomas Wei Song
  role: author
- name: Hong Youl Park
  role: author
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Nathaniel Patrick Stern
  role: author
- name: Vinod Kumar Sangwan
  role: author
- name: Mark Christopher Hersam
  role: author

## Contact agent



## Publisher

organization: Wiley

## Managing organization



## Keyword

- subject: 2D magnetic materials
  schema: not_defined
- subject: antiferromagnetic order
  schema: not_defined
- subject: NiI2
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by-nc-nd/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Advanced Functional Materials
  issn: '16163028'
  volume: '33'
  issue: '12'
  article_number: '2212568'

## Conference



## Related item



## Funding

- identifier: DMR‐1720139
  funder_name: Northwestern University
- identifier: N00014‐19‐1‐2297
  funder_name: Office of Naval Research
- identifier: DE‐SC0019356
  funder_name: U.S. Department of Energy
- identifier: DMR‐1905986
  funder_name: National Science Foundation
- identifier: DMR‐2004420
  funder_name: National Science Foundation
- identifier: 19H05790
  funder_name: Japan Society for the Promotion of Science
- identifier: 20H00354
  funder_name: Japan Society for the Promotion of Science
- identifier: 21H05233
  funder_name: Japan Society for the Promotion of Science

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: f6245c2f-005d-4297-91fe-6596dae0e520
  filename: Adv Funct Materials - 2023 - Lebedev - Electrical Interrogation of Thickness‐Dependent
    Multiferroic Phase Transitions in.pdf
  content_type: application/pdf
  size: 1846852
  md5: '043229bcb54f335f9d41fdba6e34d1aa'

## Thumbnail

fileset_id: f6245c2f-005d-4297-91fe-6596dae0e520
filename: Adv Funct Materials - 2023 - Lebedev - Electrical Interrogation of Thickness‐Dependent
  Multiferroic Phase Transitions in.pdf