# Rapid homoepitaxial growth of (011) β-Ga                    <sub>2</sub>                    O                    <sub>3</sub>                    by HCl-based halide vapor phase epitaxy

https://mdr.nims.go.jp/datasets/7ff80937-a357-436a-9aae-9f2cc9e8ece1

## File

- [Rapid homoepitaxial growth of 011 -Ga2O3 by HCl-based halide vapor phase epitaxy.pdf](https://mdr.nims.go.jp/filesets/890c35fc-8b3b-4cdc-b24d-e8cee5429903/download) ([Detail](https://mdr.nims.go.jp/filesets/890c35fc-8b3b-4cdc-b24d-e8cee5429903.md))

## Id

7ff80937-a357-436a-9aae-9f2cc9e8ece1

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-11-26T08:59:57.338552Z

## Updated at

2025-11-27T23:30:04.178912Z

## Published at

2025-11-27T23:22:40.187647Z

## Doi



## First published url

https://doi.org/10.1080/14686996.2025.2585551

## Date published

2025-12-31

## Recorded date published

2025-12-31

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: |-
    Rapid homoepitaxial growth of (011) β-Ga
                        <sub>2</sub>
                        O
                        <sub>3</sub>
                        by HCl-based halide vapor phase epitaxy
  title_type: original
  lang: en

## Description

- description: We demonstrated rapid homoepitaxial growth on (011) β-Ga2O3 substrates
    using HCl-based halide vapor phase epitaxy (HVPE), in which GaCl was synthesized
    by reacting metallic Ga with HCl gas, and examined properties of the resulting
    layer. These were compared with layers grown using Cl2-based HVPE, where GaCl
    was produced from Ga and Cl2. The growth rate on (011) substrates, approximately
    60% of that on (001), reached ~14 μm/h, which was 5–7 times higher than those
    previously reported for Cl2-based HVPE. Despite this high rate, no polycrystalline
    grains, sometimes found in Cl2-based HVPE, were detected. Atomic force microscopy
    revealed a surface with root-mean-square roughness of 6.5 nm over a 100 × 100
    μm2 area. In contrast, Nomarski microscopy revealed the presence of pits (~10
    μm in diameter at 3.6 μm thickness) with a density of ~3.7×10^3 cm-2, a feature
    not reported for Cl2-based HVPE. Cross-sectional transmission electron microscopy
    confirmed the absence of crystal defects or inclusions at the pit bottom. X-ray
    diffraction 2θ–ω scans and pole figure measurements confirmed that the epitaxial
    layers were single crystalline, with rocking-curve FWHM values comparable to or
    smaller than those of the substrate. Secondary ion mass spectrometry revealed
    a chlorine concentration of 1.7 × 1015 cm-3, which was significantly lower than
    1.1 × 1016 cm-3 measured in the (001) layers. Thus, while the pit issue requires
    further investigation, HCl-based HVPE enables the rapid growth of low-chlorine
    (011) β-Ga2O3, offering significant potential for cost reduction in high-performance
    power devices with thick drift layers.
  description_type: abstract
  lang: und

## Creator

- name: Yuichi Oshima
  role: author
  orcid: https://orcid.org/0000-0001-8293-4891
- name: Takayoshi Oshima
  role: author
  orcid: https://orcid.org/0000-0001-8550-9735

## Contact agent



## Publisher

organization: Informa UK Limited

## Managing organization



## Keyword

- subject: Ga2O3
  schema: not_defined
- subject: HVPE
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin



## Embargo



## Journal

- title: Science and Technology of Advanced Materials
  issn: '14686996'
  volume: '26'
  issue: '1'
  article_number: '2585551'

## Conference



## Related item



## Funding

- identifier: JPNP22007
  funder_name: New Energy and Industrial Technology Development Organization

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



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## Fileset

- id: 890c35fc-8b3b-4cdc-b24d-e8cee5429903
  filename: Rapid homoepitaxial growth of 011 -Ga2O3 by HCl-based halide vapor phase
    epitaxy.pdf
  content_type: application/pdf
  size: 5414934
  md5: 777acd5a0c1267ae92d52687bc0edf50

## Thumbnail

fileset_id: 890c35fc-8b3b-4cdc-b24d-e8cee5429903
filename: Rapid homoepitaxial growth of 011 -Ga2O3 by HCl-based halide vapor phase
  epitaxy.pdf