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Low dimensional ZnO-based materials have drawn much attention for the past decades due to their unique electronic and optical properties and potential applications in optoelectronic devices. In this tutorial, we will cover the past and the latest developments in ZnO thin films and micro/nanostructures in terms of excitonic and related lasing processes. First, we will give a brief overview of temperature-dependent linear excitonic absorption and luminescence spectra. Second, we will introduce feedback mechanism for lasing in various forms of ZnO, ranging from nanoparticles to nanowires, nanodisks and thin films. As for the feedback mechanism, detailed descriptions are given to random lasing, Fabry-Perót lasing, and whispering gallery mode lasing. Third, we discuss possible gain mechanisms, i.e., excitonic gain and electron-hole plasma (EHP) gain, in ZnO. A special interest is also devoted to the Mott carrier density, which is a crucial parameter to distinguish between excitonic and EHP contributions to lasing.

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• In Copyright
  This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Aika Tashiro, Yutaka Adachi, Takashi Uchino; Excitonic processes and lasing in ZnO thin films and micro/nanostructures. J. Appl. Phys. 14 June 2023; 133 (22): 221101 and may be found at https://doi.org/10.1063/5.0142719

Keyword: Ultrafast carrier dynamics, Stimulated-emission, Band-gap, Photoreflectance spectra, Polariton spectra, Nonlinear optics

Date published: 2023-06-14

Publisher: AIP Publishing

Journal:

• Journal of Applied Physics (ISSN: 00218979) vol. 133 issue. 22 221101

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Manuscript type: Author's version (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4755

First published URL: https://doi.org/10.1063/5.0142719

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Updated at: 2024-09-18 12:30:18 +0900

Published on MDR: 2024-09-18 12:30:18 +0900