# (110)- and (−134)-faceted surface morphology of halide vapor phase epitaxy-grown                    <i>β-</i>                    Ga                    <sub>2</sub>                    O                    <sub>3</sub>                    homoepitaxial layers on (011) substrates

https://mdr.nims.go.jp/datasets/7f0ea44e-cf8e-43ed-ad27-c73280ce3fbf

## File

- [jjap_65_13_138001.pdf](https://mdr.nims.go.jp/filesets/b8d85125-ea02-47bd-a7b3-5e45615cfb66/download) ([Detail](https://mdr.nims.go.jp/filesets/b8d85125-ea02-47bd-a7b3-5e45615cfb66.md))

## Id

7f0ea44e-cf8e-43ed-ad27-c73280ce3fbf

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2026-07-09T00:19:09.531232Z

## Updated at

2026-07-09T01:29:39.059812Z

## Published at

2026-07-09T03:30:27.960405Z

## Doi



## First published url

https://doi.org/10.35848/1347-4065/ae83f5

## Date published

2026-07-15

## Recorded date published

2026-7-15

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: "(110)- and (−134)-faceted surface morphology of halide vapor phase epitaxy-grown
    \                   <i>β-</i>                    Ga                    <sub>2</sub>
    \                   O                    <sub>3</sub>                    homoepitaxial
    layers on (011) substrates"
  title_type: original
  lang: en

## Description

- description: "The surface morphology of the homoepitaxial layer grown on a (011)
    β-Ga2O3 substrate by HCl-based halide vapor phase epitaxy was investigated using
    atomic force microscopy and transmission electron microscopy. The surface consisted
    of (110) and (−134) facets elongated along [111], with a facet coverage ratio
    of  0.210:0.790, in close agreement with the geometrically expected ratio of 0.219:0.781.
    Thus, the surface can be regarded as being composed of (110) macrosteps and (−134)
    terraces. These findings indicate that growth\r\nkinetics and impurity incorporation
    should be discussed based on the actual (110) and (−134) faceted morphology, rather
    than the nominal (011) substrate orientation."
  description_type: abstract
  lang: und

## Creator

- name: Takayoshi Oshima
  role: author
  orcid: https://orcid.org/0000-0001-8550-9735
- name: Yuichi Oshima
  role: author
  orcid: https://orcid.org/0000-0001-8293-4891

## Contact agent



## Publisher

organization: IOP Publishing

## Managing organization



## Keyword

- subject: Ga2O3
  schema: not_defined
- subject: "(011)"
  schema: not_defined
- subject: AFM
  schema: not_defined
- subject: TEM
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Japanese Journal of Applied Physics
  issn: '00214922'
  volume: '65'
  issue: '13'
  article_number: '138001'

## Conference



## Related item



## Funding

- identifier: JPNP22007
  funder_name: New Energy and Industrial Technology Development Organization

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: b8d85125-ea02-47bd-a7b3-5e45615cfb66
  filename: jjap_65_13_138001.pdf
  content_type: application/pdf
  size: 832858
  md5: 7272c6f85a586ec8405b249f18da01e6

## Thumbnail

fileset_id: b8d85125-ea02-47bd-a7b3-5e45615cfb66
filename: jjap_65_13_138001.pdf