# Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam

https://mdr.nims.go.jp/datasets/7ed5079c-f48c-4eab-bdee-5667062dc6c7

## File

- [Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam.pdf](https://mdr.nims.go.jp/filesets/ab062a00-f604-4b4c-9f09-6c7f3076ed77/download) ([Detail](https://mdr.nims.go.jp/filesets/ab062a00-f604-4b4c-9f09-6c7f3076ed77.md))

## Id

7ed5079c-f48c-4eab-bdee-5667062dc6c7

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2023-09-27T00:37:07.138377Z

## Updated at

2024-01-05T13:12:35.634399Z

## Published at

2023-10-04T04:30:49.164633Z

## Doi

https://doi.org/10.48505/nims.4234

## First published url

https://doi.org/10.1117/12.2646233

## Date published

2023-03-15

## Recorded date published

2023-3-15

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Annealing properties of vacancy-type defects in ion implanted GaN during
    ultra-high-pressure annealing studied by using a monoenergetic positron beam
  title_type: original
  lang: en

## Description

- description: 'Behaviors of vacancy-type defects in ion-implanted GaN were studied
    by means of positron annihilation. Si or Mg ions were implanted into GaN to obtain
    300-nm-deep box profiles of the impurities. The ion-implanted samples were annealed
    up to 1480°C under a N<sub>2</sub> pressure of 1 GPa (ultra-high-pressure annealing:
    UHPA). For as-implanted GaN, the major defect species was identified as Ga-vacancy-type
    defects such as a divacancy (V<sub>Ga</sub>V<sub>N</sub>). After annealing above
    1000°C, vacancy clusters, such as (V<sub>Ga</sub>V<sub>N</sub>)<sub>3</sub>, were
    introduced, and they were found to be remained even after 1480°C annealing. For
    Mg-implanted GaN with [Mg]=10<sup>18</sup> cm<sup>-3</sup>, no large change in
    the depth distribution of Mg was observed before and after annealing at 1400°C.
    For the sample with [Mg]=10<sup>19</sup> cm<sup>-3</sup>, however, Mg diffused
    into the bulk, which was attributed to the over-doping of Mg and their vacancy-assisted
    diffusion. The Mg diffusion was suppressed by sequential N-implantation, which
    was attributed to the reaction between Mg and vacancies under a N-rich condition.
    Interactions between vacancies, Mg, and H during UHPA were also discussed.'
  description_type: abstract
  lang: eng

## Creator

- name: Akira Uedono
  role: author
- name: Hideki Sakurai
  role: author
- name: Jun Uzuhashi
  role: author
  orcid: https://orcid.org/0000-0003-2023-8158
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Tetsuo Narita
  role: author
- name: Kacper Sierakowski
  role: author
- name: Shoji Ishibashi
  role: author
- name: Shigefusa F. Chichibu
  role: author
- name: Michal Bockowski
  role: author
- name: Jun Suda
  role: author
- name: Tadakatsu Ohokubo
  role: author
- name: Nobuyuki Ikarashi
  role: author
- name: Kazuhiro Hono
  role: author
  orcid: https://orcid.org/0000-0001-7367-0193
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Tetsu Kachi
  role: author

## Contact agent



## Publisher

organization: SPIE

## Managing organization



## Keyword

- subject: gallium nitride
  schema: not_defined
- subject: vacancy
  schema: not_defined
- subject: positron
  schema: not_defined

## Rights

- description: "Copyright 2023 Society of Photo‑Optical Instrumentation Engineers
    (SPIE). One print or electronic copy may be made for personal use only. Systematic
    reproduction and distribution, duplication of any material in this publication
    for a fee or for commercial purposes, and modification of the contents of the
    publication are prohibited.<br>\r\n<br>\r\nAkira Uedono, Hideki Sakurai, Jun Uzuhashi,
    Tetsuo Narita, Kacper Sierakowski, Shoji Ishibashi, Shigefusa F. Chichibu, Michal
    Bockowski, Jun Suda, Tadakatsu Ohokubo, Nobuyuki Ikarashi, Kazuhiro Hono, Tetsu
    Kachi, “Annealing properties of vacancy-type defects in ion implanted GaN during
    ultra-high-pressure annealing studied by using a monoenergetic positron beam,”
    Proc. SPIE Volume 12421, Gallium Nitride Materials and Devices XVIII; 124210C
    (2023). https://doi.org/10.1117/12.2646233"
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Proceedings of SPIE - The International Society for Optical Engineering
  issn: '0277786X'
  volume: '12421'
  article_number: 124210C

## Conference



## Related item



## Funding



## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: ab062a00-f604-4b4c-9f09-6c7f3076ed77
  filename: Annealing properties of vacancy-type defects in ion implanted GaN during
    ultra-high-pressure annealing studied by using a monoenergetic positron beam.pdf
  content_type: application/pdf
  size: 179989
  md5: f3f7e9836cdb79566f1f04fe6db8957b

## Thumbnail

fileset_id: ab062a00-f604-4b4c-9f09-6c7f3076ed77
filename: Annealing properties of vacancy-type defects in ion implanted GaN during
  ultra-high-pressure annealing studied by using a monoenergetic positron beam.pdf