# Origin of Mobility Reduction in Thin a-IGZO TFTs and Its Improvement

https://mdr.nims.go.jp/datasets/7e9e72c4-3fff-4e0b-b077-0499ee71d17b

## File

- [Cho_IEEE_EDL2026.pdf](https://mdr.nims.go.jp/filesets/7f828c60-302b-4a89-8ab4-7fe79b81bdc5/download) ([Detail](https://mdr.nims.go.jp/filesets/7f828c60-302b-4a89-8ab4-7fe79b81bdc5.md))

## Id

7e9e72c4-3fff-4e0b-b077-0499ee71d17b

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2026-08-25T05:13:24.807884Z

## Updated at

2026-08-25T05:17:04.440431Z

## Published at

2026-08-25T07:27:38.004980Z

## Doi



## First published url

https://doi.org/10.1109/led.2026.3695312

## Date published

2026-05-22

## Recorded date published



## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Origin of Mobility Reduction in Thin a-IGZO TFTs and Its Improvement
  title_type: original
  lang: en

## Description

- description: The degradation of field-effect mobility with decreasing channel thickness
    in amorphous In-Ga-Zn-O thin-film transistors (a-IGZO TFTs) remains a critical
    issue with a controversial origin. Here, we propose that the mobility degradation
    in very thin a-IGZO TFTs originates from a defective surface layer. Simulated
    results reveal that the degradation is primarily governed by the broadening of
    unoccupied tail states below the conduction band minimum. These large tail state
    densities arise from enhanced structural disorder created by sputter-deposition
    process. As the channel thickness decreases, this defective layer becomes dominant
    in carrier transport. The presence of surface defect layer was revealed by hard
    X-ray photoelectron spectroscopy combined with ex situ wet etching. Removal of
    the surface defective layer by the etching led to the restoration of the mobility
    of the 5 nm channel thickness from 13.7 to 28.5 cm2/V·s at 2 MV/cm, which is comparable
    to the thick TFTs.
  description_type: abstract
  lang: und

## Creator

- name: Hanjun Cho
  role: author
  orcid: https://orcid.org/0009-0009-2834-8846
- name: Masatake Tsuji
  role: author
  orcid: https://orcid.org/0000-0002-3404-6037
- name: Shigenori Ueda
  role: author
  orcid: https://orcid.org/0000-0001-9425-0614
- name: Hideo Hosono
  role: author
  orcid: https://orcid.org/0000-0001-9260-6728

## Contact agent



## Publisher

organization: Institute of Electrical and Electronics Engineers (IEEE)

## Managing organization



## Keyword

- subject: a-IGZO
  schema: not_defined
- subject: mobility
  schema: not_defined
- subject: TFT
  schema: not_defined
- subject: surface defects
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

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## Data origin



## Embargo



## Journal

- title: IEEE Electron Device Letters
  issn: '07413106'
  volume: '47'
  issue: '7'
  start_page: 1394
  end_page: 1397

## Conference



## Related item



## Funding

- identifier: JPMXP1122683430
  funder_name: Ministry of Education, Culture, Sports, Science and Technology
- identifier: JP23K19266
  funder_name: JSPS KAKENHI
- identifier: JP24K17753
  funder_name: JSPS KAKENHI
- identifier: IO250530-13006-01
  funder_name: Samsung

## Instrument



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## Specimen



## Chemical composition



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## Fileset

- id: 7f828c60-302b-4a89-8ab4-7fe79b81bdc5
  filename: Cho_IEEE_EDL2026.pdf
  content_type: application/pdf
  size: 534254
  md5: cbf5234dfd016f1c87cceceea49c993c

## Thumbnail

fileset_id: 7f828c60-302b-4a89-8ab4-7fe79b81bdc5
filename: Cho_IEEE_EDL2026.pdf