# Novel Mixed-Dimensional hBN-Passivated Silicon Nanowire Reconfigurable Field Effect Transistors: Fabrication and Characterization

https://mdr.nims.go.jp/datasets/7df11a0f-79b8-4a86-8f9f-1e7a44aa799d

## File

- [acsami.3c04808.pdf](https://mdr.nims.go.jp/filesets/351e3ba6-da67-46ce-ac71-1dbb56a2ec36/download) ([Detail](https://mdr.nims.go.jp/filesets/351e3ba6-da67-46ce-ac71-1dbb56a2ec36.md))

## Id

7df11a0f-79b8-4a86-8f9f-1e7a44aa799d

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-02-28T05:44:01.624900Z

## Updated at

2025-02-28T23:30:31.186511Z

## Published at

2025-02-28T23:30:31.303820Z

## Doi



## First published url

https://doi.org/10.1021/acsami.3c04808

## Date published

2023-08-30

## Recorded date published

2023-8-30

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: 'Novel Mixed-Dimensional hBN-Passivated Silicon Nanowire Reconfigurable Field
    Effect Transistors: Fabrication and Characterization'
  title_type: original
  lang: en

## Description

- description: This work demonstrates the novel concept of a mixed-dimensional reconfigurable
    field effect transistor (RFET) by combining a one-dimensional (1D) channel material
    like a silicon (Si) nanowire with a two-dimensional (2D) material as a gate dielectric.
    An RFET is an innovative device that can be dynamically programmed to perform
    as either n- or p-FET by applying appropriate gate potentials. In this work, an
    insulating 2D material, hexagonal boron nitride (hBN) is introduced as a gate
    dielectric and encapsulation layer around the nanowire in place of a thermally
    grown or atomic- layer-deposited (ALD) oxide. hBN flake was mechanically exfoliated
    and transferred onto a silicon nanowire-based RFET device using the dry viscoelastic
    stamping transfer technique. The thickness of the hBN flakes was investigated
    by atomic force microscopy and transmission electron microscopy. The ambipolar
    transfer characteristics of the Si- hBN RFETs with different gating architectures
    showed a significant improvement in subthreshold swing, p-n on-currents, hysteresis,
    and on-off ratio (ION/IOFF) due to the encapsulation and passivation of the nanowire
    with the hBN flake.
  description_type: abstract
  lang: und

## Creator

- name: Sayantan Ghosh
  role: author
- name: Muhammad Bilal Khan
  role: author
- name: Phanish Chava
  role: author
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
- name: Slawomir Prucnal
  role: author
- name: René Hübner
  role: author
- name: Thomas Mikolajick
  role: author
- name: Artur Erbe
  role: author
- name: Yordan M. Georgiev
  role: author

## Contact agent



## Publisher

organization: American Chemical Society (ACS)

## Managing organization



## Keyword

- subject: Reconfigurable field effect transistor
  schema: not_defined
- subject: silicon nanowire
  schema: not_defined
- subject: hexagonal boron nitride
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin



## Embargo



## Journal

- title: ACS Applied Materials & Interfaces
  issn: '19448252'
  volume: '15'
  issue: '34'
  start_page: 40709
  end_page: 40718

## Conference



## Related item



## Funding

- identifier: '899282'
  funder_name: H2020 Future and Emerging Technologies

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: 351e3ba6-da67-46ce-ac71-1dbb56a2ec36
  filename: acsami.3c04808.pdf
  content_type: application/pdf
  size: 6844280
  md5: 1f61c1c7cc1c6a36064f10eca77fa8d8

## Thumbnail

fileset_id: 351e3ba6-da67-46ce-ac71-1dbb56a2ec36
filename: acsami.3c04808.pdf