# Fabrication of β-Ga            <sub>2</sub>            O            <sub>3</sub>            /air-gap structures on (001) β-Ga            <sub>2</sub>            O            <sub>3</sub>            using HCl gas etching

https://mdr.nims.go.jp/datasets/7d1b2663-babf-4d4a-85bc-ce280f55564e

## File

- [Fabrication of -Ga2O3 air-gap structures on 001 -Ga2O3 using HCl gas etching.pdf](https://mdr.nims.go.jp/filesets/b91d6c1e-893b-42f1-9d01-bd36cfbba37e/download) ([Detail](https://mdr.nims.go.jp/filesets/b91d6c1e-893b-42f1-9d01-bd36cfbba37e.md))

## Id

7d1b2663-babf-4d4a-85bc-ce280f55564e

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-09-04T00:22:55.774710Z

## Updated at

2025-09-04T03:30:25.993045Z

## Published at

2025-09-04T03:20:09.853927Z

## Doi



## First published url

https://doi.org/10.1080/27660400.2025.2554046

## Date published

2025-12-31

## Recorded date published

2025-12-31

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: |-
    Fabrication of β-Ga
                <sub>2</sub>
                O
                <sub>3</sub>
                /air-gap structures on (001) β-Ga
                <sub>2</sub>
                O
                <sub>3</sub>
                using HCl gas etching
  title_type: original
  lang: en

## Description

- description: "β-Ga2O3/air-gap structures were fabricated on (001) substrates via
    crystallographic\r\netching with HCl gas. Etching at 650 °C under an HCl partial
    pressure of 250 Pa resulted\r\nin a vertical etch rate of 0.10 μm/min on the (001)
    plane and a lateral etch rate of 0.70\r\nμm/min along the <010> direction. This
    high orthogonal etching anisotropy enabled the\r\nformation of β-Ga2O3/air-gap
    structures—such as cantilevers and air bridges—without\r\nthe need for wafer bonding
    or transfer processes. This straightforward technique,\r\ncompatible with commonly
    used (001) substrates, holds promise for the integration of β-\r\nGa2O3-based
    microelectromechanical systems (MEMS) and power electronic devices."
  description_type: abstract
  lang: und

## Creator

- name: Takayoshi Oshima
  role: author
  orcid: https://orcid.org/0000-0001-8550-9735
- name: Yuichi Oshima
  role: author
  orcid: https://orcid.org/0000-0001-8293-4891

## Contact agent



## Publisher

organization: Informa UK Limited

## Managing organization



## Keyword

- subject: β-Ga2O3
  schema: not_defined
- subject: cantilever
  schema: not_defined
- subject: air bridge
  schema: not_defined
- subject: MEMS
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin



## Embargo



## Journal

- title: 'Science and Technology of Advanced Materials: Methods'
  issn: '27660400'
  volume: '5'
  issue: '1'
  article_number: '2554046'

## Conference



## Related item



## Funding

- identifier: JP24K01368
  funder_name: Japan Society for the Promotion of Science (JSPS), MEXT, Japan

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: b91d6c1e-893b-42f1-9d01-bd36cfbba37e
  filename: Fabrication of -Ga2O3 air-gap structures on 001 -Ga2O3 using HCl gas etching.pdf
  content_type: application/pdf
  size: 2818415
  md5: 663fb3d10089048496f73d24d8b6d56e

## Thumbnail

fileset_id: b91d6c1e-893b-42f1-9d01-bd36cfbba37e
filename: Fabrication of -Ga2O3 air-gap structures on 001 -Ga2O3 using HCl gas etching.pdf