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Developing high-performance and stable Sn-based perovskite solar cells (PSCs) is difficult due to the inherent tendency of Sn2+ oxidation and, the huge energy mismatch between perovskite and Phenyl-C61-butyric acid methyl ester (PCBM), a frequently employed electron transport layer (ETL). This study demonstrates that perovskite surface defects can be passivated and PCBM's electrical properties improved by doping n-type polymer N2200 into PCBM. The doping of PCBM with N2200 results in enhanced band alignment and improved electrical properties of PCBM. The presence of electron- donating atoms such as S, and O in N2200, effectively coordinates with free Sn2+ to prevent further oxidation. The doping of PCBM with N2200 offers a reduced conduction band offset (CBO) (from 0.38 to 0.21 eV) at the interface between the ETL and perovskite. As a result, the N2200 doped PCBM-based PSCs show an enhanced open circuit voltage of 0.79 V with impressive power conversion efficiency (PCE) of 12.98 % (certified PCE 11.95 %). Significantly, the N2200 doped PCBM-based PSCs exhibited exceptional stability and retained above 90 % of their initial PCE when subjected to continuous illumination at maximum power point tracking for 1000 hours under one sun.

権利情報:

• Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
  

キーワード: Minimization of Energy Level Mismatch, Perovskite Solar Cells, n-type Polymer, Stable Sn-Perovskite

刊行年月日: 2024-06-19

出版者: Wiley

掲載誌:

• Small (ISSN: 16136810) vol. 20 issue. 43 2402896

研究助成金:

• JST-Mirai Program JPMJMI21E6

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5261

公開URL: https://doi.org/10.1002/smll.202402896

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更新時刻: 2025-01-10 16:31:23 +0900

MDRでの公開時刻: 2025-01-10 16:31:24 +0900