# Interfacial Elemental Analysis of Slanted Edge-Contacted Monolayer MoS<sub>2</sub> Transistors via Directionally Angled Etching

https://mdr.nims.go.jp/datasets/7ce7283c-664c-45c2-977c-8f50aaccd8c4

## File

- [lin-et-al-2025-interfacial-elemental-analysis-of-slanted-edge-contacted-monolayer-mos2-transistors-via-directionally.pdf](https://mdr.nims.go.jp/filesets/6beb209e-78b0-4ba1-a354-748ce5ece917/download) ([Detail](https://mdr.nims.go.jp/filesets/6beb209e-78b0-4ba1-a354-748ce5ece917.md))

## Id

7ce7283c-664c-45c2-977c-8f50aaccd8c4

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2026-03-08T05:06:31.956933Z

## Updated at

2026-03-10T03:30:24.277984Z

## Published at

2026-03-10T00:03:20.840631Z

## Doi



## First published url

https://doi.org/10.1021/acsnano.4c13581

## Date published

2025-02-04

## Recorded date published

2025-2-4

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Interfacial Elemental Analysis of Slanted Edge-Contacted Monolayer MoS<sub>2</sub>
    Transistors via Directionally Angled Etching
  title_type: original
  lang: en

## Description

- description: Edge contacts offer a significant advantage for enhancing the performance
    of semiconducting transition metal dichalcogenide (TMDC) devices by interfacing
    with the metallic contacts on the lateral side, which allows encapsulation of
    all of the channel material. However, despite intense research, the fabrication
    of feasible electrical edge contacts to TMDCs to improve device performance remains
    a great challenge, as interfacial chemical characterization via conventional methods
    is lacking. A major bottleneck in explicitly understanding the chemical and electronic
    properties of the edge contact at the metal–two-dimensional (2D) semiconductor
    interface is the small cross section when characterizing nominally one-dimensional
    edge contacts. Here, we demonstrate a directional angled etching technique that
    enables characterization of the interfacial chemistry at the metal–MoS2 junction
    when in an edge-contact configuration. The slanted edge structure provides a substantial
    cross section for elemental analysis of the edge contact by conventional X-ray
    photoemission spectroscopy in which a simple chemical environment and sharp interface
    were revealed. Facilitated by the well-characterized contact interface, we realized
    slanted edge-contacted monolayer MoS2 transistors encapsulated by hexagonal boron
    nitride. The transport characteristics and photoluminescence of these transistors
    allowed us to attribute the efficient carrier injection to direct and Fowler–Nordheim
    tunneling, validating the distinct Au–MoS2 interface. The established method represents
    a viable approach to fabricate edge contacts with encapsulated 2D material devices,
    which is crucial for both the fundamental study of 2D materials and high-performance
    electronic applications.
  description_type: abstract
  lang: und

## Creator

- name: Chia-Chun Lin
  role: author
- name: Naomi Tabudlong Paylaga
  role: author
- name: Chun-Chieh Yen
  role: author
- name: Yu-Hsuan Lin
  role: author
- name: Kuang-Hsu Wang
  role: author
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
- name: Chi-Te Liang
  role: author
- name: Shao-Yu Chen
  role: author
- name: Wei-Hua Wang
  role: author

## Contact agent



## Publisher

organization: American Chemical Society (ACS)

## Managing organization



## Keyword

- subject: 'edge contacts
    '
  schema: not_defined
- subject: 'MoS2 transistors
    '
  schema: not_defined
- subject: " interfacial analysis"
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/
  date_licensed: 2025-01-21

## Other identifier(s)



## Data origin



## Embargo



## Journal

- title: ACS Nano
  issn: 1936086X
  volume: '19'
  issue: '4'
  start_page: 4452
  end_page: 4461

## Conference



## Related item



## Funding

- funder_name: Ministry of Education, Culture, Sports, Science and Technology
- identifier: 20H00354
  funder_name: Japan Society for the Promotion of Science
- identifier: 21H05233
  funder_name: Japan Society for the Promotion of Science
- identifier: 23H02052
  funder_name: Japan Society for the Promotion of Science
- identifier: 112-2740-M-002-006
  funder_name: National Science and Technology Council
- identifier: 113-2740-M-002-007
  funder_name: National Science and Technology Council
- identifier: ESCA003500
  funder_name: National Science and Technology Council

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: 6beb209e-78b0-4ba1-a354-748ce5ece917
  filename: lin-et-al-2025-interfacial-elemental-analysis-of-slanted-edge-contacted-monolayer-mos2-transistors-via-directionally.pdf
  content_type: application/pdf
  size: 4026966
  md5: c3aa58442a0e5527bbf1fb035dd8652b

## Thumbnail

fileset_id: 6beb209e-78b0-4ba1-a354-748ce5ece917
filename: lin-et-al-2025-interfacial-elemental-analysis-of-slanted-edge-contacted-monolayer-mos2-transistors-via-directionally.pdf