# Tip-Based Cleaning and Smoothing Improves Performance in Monolayer MoS<sub>2</sub> Devices

https://mdr.nims.go.jp/datasets/7ba40004-628a-4c8f-9660-f0ef5eceb7da

## File

- [acsomega.0c05934.pdf](https://mdr.nims.go.jp/filesets/9adb05d0-8d8c-435a-a01d-1ca0b840c2c8/download) ([Detail](https://mdr.nims.go.jp/filesets/9adb05d0-8d8c-435a-a01d-1ca0b840c2c8.md))

## Id

7ba40004-628a-4c8f-9660-f0ef5eceb7da

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-02-25T01:27:41.821998Z

## Updated at

2025-03-03T07:30:23.983667Z

## Published at

2025-03-03T07:30:24.139034Z

## Doi



## First published url

https://doi.org/10.1021/acsomega.0c05934

## Date published

2021-02-09

## Recorded date published

2021-2-9

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Tip-Based Cleaning and Smoothing Improves Performance in Monolayer MoS<sub>2</sub>
    Devices
  title_type: original
  lang: en

## Description

- description: Two-dimensional (2D) materials and heterostructures are promising candidates
    for nanoelectronics. However, the quality of material interfaces often limits
    the performance of electronic devices made from atomically thick 2D materials
    and heterostructures. Atomic force microscopy (AFM) tip-based cleaning is a reliable
    technique to remove interface contaminants and flatten heterostructures. Here
    we demonstrate AFM tip-based cleaning applied to hBN encapsulated monolayer MoS2
    transistors, which results in electrical performance improvements of the devices.
    To investigate the impact of cleaning on device performance, we directly compared
    the characteristics of as-transferred heterostructures and transistors before
    and after tip-based cleaning using photoluminescence (PL) and electronic measurements.
    The PL linewidth of monolayer MoS2 decreased from 84 meV before cleaning to 71
    meV after cleaning. The extrinsic mobility of monolayer MoS22 field-effect transistors
    increased from 21 cm/Vs before cleaning to 38 cm2/Vs after cleaning. Using the
    results from AFM topography, photoluminescence, and back-gated field-effect measurements,
    we infer that tip-based cleaning enhances the mobility of hBN encapsulated monolayer
    MoS2 by reducing interface disorder. Finally, we fabricate a MoS2 field-effect
    transistor (FET) from a tip-cleaned heterostructure and achieved a device mobility
    of 73 cm2/Vs. The results of this work could be used to improve the electrical
    performance of heterostructure devices as well as other types of mechanically
    assembled van der Waals heterostructures.
  description_type: abstract
  lang: und

## Creator

- name: Sihan Chen
  role: author
- name: Jangyup Son
  role: author
- name: Siyuan Huang
  role: author
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
- name: Rashid Bashir
  role: author
- name: Arend M. van der Zande
  role: author
- name: William P. King
  role: author

## Contact agent



## Publisher

organization: American Chemical Society (ACS)

## Managing organization



## Keyword

- subject: Van der Waals devices
  schema: not_defined
- subject: atomic force microscopy
  schema: not_defined
- subject: MoS2 transistors
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by-nc-nd/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: ACS Omega
  issn: '24701343'
  volume: '6'
  issue: '5'
  start_page: 4013
  end_page: 4021

## Conference



## Related item



## Funding

- identifier: 2K02420
  funder_name: Korea Institute of Science and Technology
- identifier: 2Z06030
  funder_name: Korea Institute of Science and Technology
- identifier: '089401'
  funder_name: Taiwan Semiconductor Manufacturing Company

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



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## Custom property



## Fileset

- id: 9adb05d0-8d8c-435a-a01d-1ca0b840c2c8
  filename: acsomega.0c05934.pdf
  content_type: application/pdf
  size: 3195728
  md5: 3c47d2aa3fa7f759f7c97de2239d8a59

## Thumbnail

fileset_id: 9adb05d0-8d8c-435a-a01d-1ca0b840c2c8
filename: acsomega.0c05934.pdf