# Impact of Sequential N Ion Implantation on Extended Defects and Mg Distribution in Mg Ion‐Implanted GaN

https://mdr.nims.go.jp/datasets/7933b0f5-c47a-4194-95a9-a69730ba250a

## File

- [Physica Rapid Research Ltrs - 2024 - Kano - Impact of Sequential N Ion Implantation on Extended Defects and Mg Distribution.pdf](https://mdr.nims.go.jp/filesets/0f7d56bc-a3a3-4bb9-9272-75f0f88e33c3/download) ([Detail](https://mdr.nims.go.jp/filesets/0f7d56bc-a3a3-4bb9-9272-75f0f88e33c3.md))

## Id

7933b0f5-c47a-4194-95a9-a69730ba250a

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-07-17T08:58:31.081836Z

## Updated at

2024-09-20T07:30:27.287838Z

## Published at

2024-09-20T07:30:27.358935Z

## Doi



## First published url

https://doi.org/10.1002/pssr.202400074

## Date published

2024-04-22

## Recorded date published

2024-9

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Impact of Sequential N Ion Implantation on Extended Defects and Mg Distribution
    in Mg Ion‐Implanted GaN
  title_type: original
  lang: en

## Description

- description: In Mg ion implantation doping of GaN, sequential N ion implantation
    reportedly changes Mg concentrations in the Mg ion-implanted region and the underlying
    region after activation annealing. Our atomic-resolution analyses showed that,
    in the Mg ion-implanted region, the N ion implantation increases the concentration
    of MgGa. The rest of the Mg atoms agglomerated to form clusters on the extended
    defects, and its concentration was also increased by the N implantation. The N
    implantation affected the coarsening of the defects, which cause Mg cluster formation.
  description_type: abstract
  lang: und

## Creator

- name: Emi Kano
  role: author
  orcid: https://orcid.org/0000-0001-6134-4980
- name: Jun Uzuhashi
  role: author
  orcid: https://orcid.org/0000-0003-2023-8158
  organization: National Institute for Materials Science
- name: Koki Kobayashi
  role: author
- name: Kosuke Ishikawa
  role: author
- name: Kyosuke Sawabe
  role: author
- name: Tetsuo Narita
  role: author
- name: Kacper Sierakowski
  role: author
- name: Michal Bockowski
  role: author
- name: Tadakatsu Ohkubo
  role: author
  orcid: https://orcid.org/0000-0003-3548-1951
  organization: National Institute for Materials Science
- name: Tetsu Kachi
  role: author
- name: Nobuyuki Ikarashi
  role: author
  orcid: https://orcid.org/0000-0002-5575-5780

## Contact agent



## Publisher

organization: Wiley

## Managing organization



## Keyword

- subject: gallium nitride
  schema: not_defined
- subject: atom probe tomography
  schema: not_defined
- subject: transmission electron microscopy
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by-nc-nd/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: physica status solidi (RRL) – Rapid Research Letters
  issn: '18626254'
  volume: '18'
  issue: '9'
  article_number: '2400074'

## Conference



## Related item



## Funding



## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: 0f7d56bc-a3a3-4bb9-9272-75f0f88e33c3
  filename: Physica Rapid Research Ltrs - 2024 - Kano - Impact of Sequential N Ion
    Implantation on Extended Defects and Mg Distribution.pdf
  content_type: application/pdf
  size: 947778
  md5: 934acf8f1ca1d661ef14b929148c52b7

## Thumbnail

fileset_id: 0f7d56bc-a3a3-4bb9-9272-75f0f88e33c3
filename: Physica Rapid Research Ltrs - 2024 - Kano - Impact of Sequential N Ion Implantation
  on Extended Defects and Mg Distribution.pdf