# <i>In situ</i> nanobeam x-ray diffraction of local strain in AlGaN/GaN high-electron-mobility transistors under operating condition

https://mdr.nims.go.jp/datasets/78cc2541-e4f5-45b0-9b7a-2883020c011e

## File

- [Shimada_transistor_nanoXRD-JAP-250704rev2-marked.pdf](https://mdr.nims.go.jp/filesets/ab83635c-8d55-49c8-acf4-a764ef061854/download) ([Detail](https://mdr.nims.go.jp/filesets/ab83635c-8d55-49c8-acf4-a764ef061854.md))

## Id

78cc2541-e4f5-45b0-9b7a-2883020c011e

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-08-22T05:27:10.988510Z

## Updated at

2025-08-22T23:30:23.690925Z

## Published at

2025-08-22T23:17:05.514943Z

## Doi

https://doi.org/10.48505/nims.5662

## First published url

https://doi.org/10.1063/5.0275921

## Date published

2025-08-21

## Recorded date published

2025-8-21

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: "<i>In situ</i> nanobeam x-ray diffraction of local strain in AlGaN/GaN high-electron-mobility
    transistors under operating condition"
  title_type: original
  lang: en

## Description

- description: We combined synchrotron radiation nanobeam X-ray diffraction technique
    with the pump-probe method to perform in-situ measurements of local strain in
    a normally-ON AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor
    device under transistor operation. The c-axis strain in the AlGaN barrier layer
    within the gate region exhibited a clear position dependence, increasing as the
    gate voltage was increased in the negative direction and as the measurement position
    moved from the center of the gate electrode towards the drain-side gate edge.
    Based on the characteristics of the measured c-axis and a-axis strains, we successfully
    extracted not only the strain component due to the inverse piezoelectric effect
    but also the thermal expansion strain component, using the constitutive equation
    for elastic bodies.
  description_type: abstract
  lang: und

## Creator

- name: Akihiro Shimada
  role: author
- name: Haruna Shiomi
  role: author
- name: Tetsuya Tohei
  role: author
  orcid: https://orcid.org/0000-0002-4113-2566
- name: Yusuke Hayashi
  role: author
  orcid: https://orcid.org/0000-0001-5672-1497
- name: Masaya Yamaguchi
  role: author
- name: Junpei Yamamoto
  role: author
  orcid: https://orcid.org/0009-0007-5684-0569
- name: Takeaki Hamachi
  role: author
  orcid: https://orcid.org/0000-0002-0631-1729
- name: Yasuhiko Imai
  role: author
  orcid: https://orcid.org/0000-0003-4686-2629
- name: Kazushi Sumitani
  role: author
- name: Shigeru Kimura
  role: author
  orcid: https://orcid.org/0000-0003-1064-7572
- name: Shota Kaneki
  role: author
  orcid: https://orcid.org/0000-0003-0806-8571
- name: Tamotsu Hashizume
  role: author
  orcid: https://orcid.org/0009-0004-8229-9460
- name: Akira Sakai
  role: author
  orcid: https://orcid.org/0000-0002-0654-504X

## Contact agent



## Publisher

organization: AIP Publishing

## Managing organization



## Keyword

- subject: GaN
  schema: not_defined
- subject: HEMT
  schema: not_defined
- subject: Strain
  schema: not_defined
- subject: In situ
  schema: not_defined

## Rights

- description: Copyright 2025 Author(s). This article is distributed under a Creative
    Commons Attribution (CC BY) License.
  identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin



## Embargo



## Journal

- title: Journal of Applied Physics
  issn: '00218979'
  volume: '138'
  issue: '7'
  article_number: '075701'

## Conference



## Related item



## Funding

- identifier: JP16H06421
  funder_name: Japan Society for the Promotion of Science
- identifier: JP22KK0055
  funder_name: Japan Society for the Promotion of Science
- identifier: JP23H01447
  funder_name: Japan Society for the Promotion of Science
- identifier: JP23H05457
  funder_name: Japan Society for the Promotion of Science
- funder_name: Murata Science and Education Foundation
- identifier: JP16H06423
  funder_name: Japan Society for the Promotion of Science

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: ab83635c-8d55-49c8-acf4-a764ef061854
  filename: Shimada_transistor_nanoXRD-JAP-250704rev2-marked.pdf
  content_type: application/pdf
  size: 652871
  md5: ec4c0c1b5eff20b8453249428a9effc6

## Thumbnail

fileset_id: ab83635c-8d55-49c8-acf4-a764ef061854
filename: Shimada_transistor_nanoXRD-JAP-250704rev2-marked.pdf