説明:
(abstract)New phase of matter usually emerges when a given symmetry breaks spontaneously, which can involve charge, spin, and valley degree of freedoms. Here, we report an observation of new correlated insulators evolved from spin polarized states to valley polarized states in AB-BA stacked twisted double bilayer graphene (TDBG). The transition of the isospin polarization is a result of the competition between spin and valley, driven by the displacement field (D). At a high field |D| > 0.7 V/nm, we observe valley polarized correlated insulators with a big Zeeman g factor of ~10, both at v = 2 in the moiré conduction band and more surprisingly at v = -2 in the moiré valence band. At a medium field |D| < 0.6 V/nm, by contrast, it is a conventional spin polarized correlated insulator at v = 2 and a featureless metal at v = -2. Moreover, we observe a valley polarized Chern insulator with C = 2 emanating at v = 2 in the electron side and a valley polarized Fermi surface around v = -2 in the hole side. The valley Chern insulator with C = 2 is evident from a well quantized Hall conductance plateau at 2e2/h and correspondingly a vanishing longitudinal component. The valley polarized Fermi surface is topologically trivial with C = 0, and it shows a series of quantized Landau levels with vLL = 0, ±1, ±2, ±3, ±4 and others. These observations are in good agreements with our band and topology calculations. Our results demonstrate a feasible way to realize isospin control and to obtain new phases of matter in TDBG by the displacement field, and might benefit other twisted or non-twisted multilayer systems.
権利情報:
キーワード: Symmetry break, spin-polarized, valley-polarized
刊行年月日: 2022-06-07
出版者: Springer Science and Business Media LLC
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研究助成金:
原稿種別: 出版者版 (Version of record)
MDR DOI:
公開URL: https://doi.org/10.1038/s41467-022-30998-x
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更新時刻: 2025-02-27 12:31:07 +0900
MDRでの公開時刻: 2025-02-27 12:31:07 +0900
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s41467-022-30998-x.pdf
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