# Systematic study of FIB-induced damage for the high-quality TEM sample preparation

https://mdr.nims.go.jp/datasets/77dda90e-5b1a-4f12-8844-6b233e961b31

## File

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## Id

77dda90e-5b1a-4f12-8844-6b233e961b31

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-05-07T03:40:19.238285Z

## Updated at

2024-05-07T06:32:35.036434Z

## Published at

2026-04-26T23:25:00.581731Z

## Doi

https://doi.org/10.48505/nims.4497

## First published url

https://doi.org/10.1016/j.ultramic.2024.113980

## Date published

2024-04-26

## Recorded date published

2024-8

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Systematic study of FIB-induced damage for the high-quality TEM sample preparation
  title_type: original
  lang: en

## Description

- description: 'The microstructural analyses by transmission electron microscopy (TEM)
    or scanning TEM (STEM) technique are strongly affected by the quality of the thin-foil
    sample. In the past 20 years, the sample preparation technique by using a focused
    Ga ion beam (FIB) with a scanning electron microscopy (SEM) system has been drastically
    developed. The cutting-edge (S)TEM investigation is especially sensitive to the
    quality of the sample; however, the sample preparation still strongly depends
    on the operators’ skills and experiences. Thus, an establishment of a solid strategy
    for a reproducible high-quality sample preparation process is essential to carry
    out high-quality (S)TEM investigation. In this work, the FIB damages introduced
    by Ga+ beam were investigated both experimentally and by using stopping and range
    of ions in matter (SRIM) simulation for silicon (Si), gallium nitride (GaN), indium
    phosphide (InP), and gallium arsenide (GaAs) semiconductors. The systematic evaluation
    of FIB damages shown in this paper should be indispensable guidance for reliable
    (S)TEM sample preparation. '
  description_type: abstract
  lang: und

## Creator

- name: Jun Uzuhashi
  role: author
  orcid: https://orcid.org/0000-0003-2023-8158
- name: Tadakatsu Ohkubo
  role: author
  orcid: https://orcid.org/0000-0003-3548-1951

## Contact agent



## Publisher

organization: Elsevier BV

## Managing organization



## Keyword

- subject: focused ion beam
  schema: not_defined
- subject: transmission electron microscopy
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by-nc-nd/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo

start_date: 2024-04-26
end_date: 2026-04-27

## Journal

- title: Ultramicroscopy
  issn: '03043991'
  volume: '262'
  article_number: '113980'

## Conference



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## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



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## Custom property



## Fileset

- id: d635fe8c-8039-453c-9964-3f0e550c6746
  filename: Systematic study of FIB-induced damage for the high-quality TEM sample
    preparation.pdf
  content_type: application/pdf
  size: 1244515
  md5: 2b55a9ca28df163b5ac8c95b958ac668

## Thumbnail

fileset_id: d635fe8c-8039-453c-9964-3f0e550c6746
filename: Systematic study of FIB-induced damage for the high-quality TEM sample preparation.pdf