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The microstructural analyses by transmission electron microscopy (TEM) or scanning TEM (STEM) technique are strongly affected by the quality of the thin-foil sample. In the past 20 years, the sample preparation technique by using a focused Ga ion beam (FIB) with a scanning electron microscopy (SEM) system has been drastically developed. The cutting-edge (S)TEM investigation is especially sensitive to the quality of the sample; however, the sample preparation still strongly depends on the operators’ skills and experiences. Thus, an establishment of a solid strategy for a reproducible high-quality sample preparation process is essential to carry out high-quality (S)TEM investigation. In this work, the FIB damages introduced by Ga+ beam were investigated both experimentally and by using stopping and range of ions in matter (SRIM) simulation for silicon (Si), gallium nitride (GaN), indium phosphide (InP), and gallium arsenide (GaAs) semiconductors. The systematic evaluation of FIB damages shown in this paper should be indispensable guidance for reliable (S)TEM sample preparation.

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• Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
  

Keyword: focused ion beam, transmission electron microscopy

Date published: 2024-04-26

Publisher: Elsevier BV

Journal:

• Ultramicroscopy (ISSN: 03043991) vol. 262 113980

Funding:

Manuscript type: Author's version (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4497

First published URL: https://doi.org/10.1016/j.ultramic.2024.113980

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Updated at: 2024-05-07 15:32:35 +0900

Published on MDR: 2026-04-27 08:25:00 +0900