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説明:

The microstructural analyses by transmission electron microscopy (TEM) or scanning TEM (STEM) technique are strongly affected by the quality of the thin-foil sample. In the past 20 years, the sample preparation technique by using a focused Ga ion beam (FIB) with a scanning electron microscopy (SEM) system has been drastically developed. The cutting-edge (S)TEM investigation is especially sensitive to the quality of the sample; however, the sample preparation still strongly depends on the operators’ skills and experiences. Thus, an establishment of a solid strategy for a reproducible high-quality sample preparation process is essential to carry out high-quality (S)TEM investigation. In this work, the FIB damages introduced by Ga+ beam were investigated both experimentally and by using stopping and range of ions in matter (SRIM) simulation for silicon (Si), gallium nitride (GaN), indium phosphide (InP), and gallium arsenide (GaAs) semiconductors. The systematic evaluation of FIB damages shown in this paper should be indispensable guidance for reliable (S)TEM sample preparation.

権利情報:

• Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
  

キーワード: focused ion beam, transmission electron microscopy

刊行年月日: 2024-04-26

出版者: Elsevier BV

掲載誌:

• Ultramicroscopy (ISSN: 03043991) vol. 262 113980

研究助成金:

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4497

公開URL: https://doi.org/10.1016/j.ultramic.2024.113980

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更新時刻: 2024-05-07 15:32:35 +0900

MDRでの公開時刻: 2026-04-27 08:25:00 +0900