説明:
(abstract)Hybrid physical vapour/atomic layer deposition technology has enabled the formation of nanolaminated Al100−zNiz/AlOxHy (bilayer period: 25/1 nm, z = 0, 2, and 5 at.%) thin films, introducing a novel interface-engineered design strategy with advanced microstructure control. This leverages dual-route tailoring of nanocrystalline Al through 1) compositional grain boundary engineering (Al100−zNiz) and 2) well-defined crystalline / amorphous interfaces (Al100−zNiz/AlOxHy). As ambient plasticity is thought to be governed by dislocation interactions with segregation-modified interfaces & lattice, elucidating the collective role of such barriers in strengthening is essential for establishing a robust design framework.
Accordingly, high-resolution analyses by scanning transmission electron microscopy (STEM) and atom probe tomography (APT) established a direct link between enhanced hardness and distinct nanostructural features. The nanolaminated Al95Ni5 / AlOxHy thin film here exhibits Ni-rich nanoclusters embedded in a sub-10 nm FCC Al matrix and smooth ∼1 nm amorphous interlayers. Notably, STEM indicated Ni decorating vertical Al grain boundaries, whereas APT reveals these to be distinct Ni-rich nanoclusters. Nanoindentation measurements confirmed hardness of 5.3 GPa for Al95Ni5/AlOxHy versus 2.7 GPa for Al/AlOxHy. Calculations showed that comparable strengthening magnitudes originate from both aspects of the dual-route tailored nanostructure: impeding dislocation motion by combined crystalline–amorphous layer confined slip and finely dispersed nanoclusters.
権利情報:
キーワード: Nanolaminated aluminium, Interface-engineering, Hybrid PVD-ALD, Nanoclusters, Crystalline/amorphous interface, Nanoindentation
刊行年月日: 2026-01-30
出版者: Elsevier BV
掲載誌:
研究助成金:
原稿種別: 出版者版 (Version of record)
MDR DOI:
公開URL: https://doi.org/10.1016/j.matdes.2026.115580
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更新時刻: 2026-04-10 18:08:28 +0900
MDRでの公開時刻: 2026-04-13 10:23:10 +0900
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