# Spectroscopic Infrared Photothermal Converters Using Uniaxially Oriented NiAl Superalloy Films with Metal‐Insulator‐Metal Strip Arrays

https://mdr.nims.go.jp/datasets/76e32f6b-aab4-404c-9be5-2ee2c5a55d7c

## File

- [NiAl_emitter_AOM_manuscript_MDR.docx](https://mdr.nims.go.jp/filesets/b65e30eb-1f6d-4b7f-a45a-d8b451425b8c/download) ([Detail](https://mdr.nims.go.jp/filesets/b65e30eb-1f6d-4b7f-a45a-d8b451425b8c.md))

## Id

76e32f6b-aab4-404c-9be5-2ee2c5a55d7c

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2026-07-06T08:52:14.616562Z

## Updated at

2026-07-06T23:40:16.536676Z

## Published at

2026-07-07T01:24:05.235114Z

## Doi

https://doi.org/10.48505/nims.6382

## First published url

https://doi.org/10.1002/adom.202502912

## Date published

2026-02-03

## Recorded date published

2026-2

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Spectroscopic Infrared Photothermal Converters Using Uniaxially Oriented
    NiAl Superalloy Films with Metal‐Insulator‐Metal Strip Arrays
  title_type: original
  lang: en

## Description

- description: This study reports the fabrication of “smooth and continuous” nickel–aluminum
    (NiAl) superalloy films deposited via direct-current sputtering using a two-step
    deposition method. The process involves an initial film deposition with in situ
    heating, followed by a subsequent room-temperature deposition and post-annealing
    at 928 K. This two-step deposition yields NiAl films with exceptionally smooth
    surface morphology, achieving a root mean squared roughness as low as ∼1.4 nm.
    To demonstrate the benefits of this approach, we fabricate a mid-infrared device
    incorporating NiAl–Al2O3–NiAl trilayers with an NiAl strip array on top. The NiAl
    films, self-organized in the (110) orientation, are patterned using laser direct
    writing followed by reactive ion etching. As designed by our electromagnetic design,
    the fabricated infrared absorbers exhibit strong resonant absorption and tunability,
    which can be controlled by adjusting the periodicity, width, and thickness of
    the top NiAl strips. To assess the impact of our proposed deposition methods,
    we compare single-step NiAl films deposited with in situ heating to the new two-step
    NiAl films, both of which are used as the bottom and top layers in the trilayer
    devices. The latter method exhibits lower background noise in both absorption
    and thermal emission spectra, achieving excellent spectral selectivity.
  description_type: abstract
  lang: und

## Creator

- name: Phuoc Toan Tran
  role: author
- name: Thien Duc Ngo
  role: author
  orcid: https://orcid.org/0000-0001-5123-9001
- name: Andrea Ruiz‐Perona
  role: author
- name: Hai Dang Ngo
  role: author
- name: Keisuke Watanabe
  role: author
  orcid: https://orcid.org/0000-0002-4285-2135
- name: Hiroshi Harada
  role: author
- name: Tadaaki Nagao
  role: author
  orcid: https://orcid.org/0000-0002-6746-2686

## Contact agent



## Publisher

organization: Wiley

## Managing organization



## Keyword

- subject: NiAl
  schema: not_defined
- subject: photothermal conversion
  schema: not_defined
- subject: IR emitter
  schema: not_defined
- subject: thermal radiaition
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin



## Embargo



## Journal

- title: Advanced Optical Materials
  issn: '21951071'
  volume: '14'
  issue: '8'
  article_number: e02912

## Conference



## Related item



## Funding

- identifier: GSE034
  funder_name: JAXA
  description: TansaX Project

## Instrument



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## Measurement method



## Specimen



## Chemical composition



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## Fileset

- id: b65e30eb-1f6d-4b7f-a45a-d8b451425b8c
  filename: NiAl_emitter_AOM_manuscript_MDR.docx
  content_type: application/vnd.openxmlformats-officedocument.wordprocessingml.document
  size: 12280321
  md5: 37d34c873989b95c9a36f82bdff44a85

## Thumbnail

fileset_id: b65e30eb-1f6d-4b7f-a45a-d8b451425b8c
filename: NiAl_emitter_AOM_manuscript_MDR.docx