# Analysis of In                    <i>x</i>                    Ga1−                    <i>x</i>                    N growth rate in atmospheric-pressure metal-organic vapor phase epitaxy: Insights into incorporation and desorption processes of GaN and InN for precise growth control

https://mdr.nims.go.jp/datasets/76421c2e-b00a-4357-8237-d5f2bac57618

## File

- [InGaN_JAP_manuscript_251203_09_04_mark.docx](https://mdr.nims.go.jp/filesets/b4924215-955c-46af-9a51-be42f25309a4/download) ([Detail](https://mdr.nims.go.jp/filesets/b4924215-955c-46af-9a51-be42f25309a4.md))
- [Fig. S1.docx](https://mdr.nims.go.jp/filesets/3cdfcb30-4ad1-4c7a-9286-2152a928f13b/download) ([Detail](https://mdr.nims.go.jp/filesets/3cdfcb30-4ad1-4c7a-9286-2152a928f13b.md))

## Id

76421c2e-b00a-4357-8237-d5f2bac57618

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2026-04-02T02:15:27.280399Z

## Updated at

2026-04-03T00:31:08.157221Z

## Published at

2026-04-03T03:26:40.160388Z

## Doi

https://doi.org/10.48505/nims.6243

## First published url

https://doi.org/10.1063/5.0307826

## Date published

2026-03-21

## Recorded date published

2026-3-21

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: 'Analysis of In                    <i>x</i>                    Ga1−                    <i>x</i>                    N
    growth rate in atmospheric-pressure metal-organic vapor phase epitaxy: Insights
    into incorporation and desorption processes of GaN and InN for precise growth
    control'
  title_type: original
  lang: en

## Description

- description: We grew GaN/InxGa1–xN superlattices (SLs) on GaN/sapphire substrates
    by atmospheric-pressure metal-organic vapor phase epitaxy (MOVPE) and determined
    the InxGa1–xN growth rate using high-resolution X-ray diffraction analysis. The
    use of SL structures substantially reduced the influence of strain relaxation,
    phase separation, and mixed 2D/3D growth modes, enabling reliable extraction of
    the effective GaN and InN growth rates within the alloy. By maintaining identical
    temperature, pressure, and gas-flow balance, we precisely estimated the individual
    growth rates and proposed a model that explicitly separates incorporation and
    desorption processes. For low In composition (xIn < 0.25), the GaN and InN rates
    exhibit negligible mutual interaction and depend solely on temperature under constant
    pressure and flow balance. The model successfully predicts InxGa1–xN growth rates
    using independent incorporation and desorption terms, and its applicability is
    confirmed for In vapor-phase ratios < 0.7 and sufficiently high V/III ratios,
    while limitations are identified under excess-In or low-temperature conditions.
    These results provide practical guidelines for optimizing MOVPE growth, contributing
    to the efficient design of active and SL layers for high-power light-emitting
    diodes and green laser diodes.
  description_type: abstract
  lang: und

## Creator

- name: Masataka Imura
  role: author
  orcid: https://orcid.org/0000-0002-4236-9549
  organization: National Institute for Materials Science
- name: Takanobu Hiroto
  role: author
  orcid: https://orcid.org/0000-0002-6176-5782
  organization: National Institute for Materials Science
- name: Takaaki Mano
  role: author
  orcid: https://orcid.org/0000-0002-6955-260X
  organization: National Institute for Materials Science
- name: Yuri Itokazu
  role: author
- name: Masafumi Jo
  role: author

## Contact agent



## Publisher

organization: AIP Publishing

## Managing organization



## Keyword

- subject: MOVPE
  schema: not_defined
- subject: GaN
  schema: not_defined
- subject: InN
  schema: not_defined
- subject: InGaN
  schema: not_defined
- subject: XRD
  schema: not_defined
- subject: Superlattice
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/
  date_licensed: 2026-03-18

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Journal of Applied Physics
  issn: '00218979'
  volume: '139'
  issue: '11'
  article_number: '115703'

## Conference



## Related item



## Funding

- identifier: JP25K01297
  funder_name: JSPS KAKENHI
- identifier: '24017480'
  funder_name: New Energy and Industrial Technology Development Organization

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: b4924215-955c-46af-9a51-be42f25309a4
  filename: InGaN_JAP_manuscript_251203_09_04_mark.docx
  content_type: application/vnd.openxmlformats-officedocument.wordprocessingml.document
  size: 5715938
  md5: 925a9ea9c388ef1e9d6cdf13f00321e0
- id: 3cdfcb30-4ad1-4c7a-9286-2152a928f13b
  filename: Fig. S1.docx
  content_type: application/vnd.openxmlformats-officedocument.wordprocessingml.document
  size: 1665518
  md5: 42ba33a7f12139582c290d200a6dd832

## Thumbnail

fileset_id: b4924215-955c-46af-9a51-be42f25309a4
filename: InGaN_JAP_manuscript_251203_09_04_mark.docx