# Monolithically‐Integrated van der Waals Synaptic Memory via Bulk Nano‐Crystallization https://mdr.nims.go.jp/datasets/75f6829f-fdfa-4bc9-afeb-f599372be6f5 ## File - [Advanced Science - 2025 - Lee - Monolithically‐Integrated van der Waals Synaptic Memory via Bulk Nano‐Crystallization.pdf](https://mdr.nims.go.jp/filesets/6d27989c-8890-4202-84ae-0fa41a992b67/download) ([Detail](https://mdr.nims.go.jp/filesets/6d27989c-8890-4202-84ae-0fa41a992b67.md)) ## Id 75f6829f-fdfa-4bc9-afeb-f599372be6f5 ## Local identifier ## Visibility open_to_public ## State published ## Created at 2026-04-03T02:19:54.675527Z ## Updated at 2026-04-03T05:54:05.164793Z ## Published at 2026-04-03T07:27:42.839048Z ## Doi ## First published url https://doi.org/10.1002/advs.202510961 ## Date published 2025-08-26 ## Recorded date published 2025-11 ## Resource type journal_article ## Manuscript type vor ## Collection ## Title - title: Monolithically‐Integrated van der Waals Synaptic Memory via Bulk Nano‐Crystallization title_type: original lang: en ## Description - description: Owing to the evolution of data-driven technologies, including the large language models, generative artificial intelligence, autonomous driving, and the internet of things requires advanced memory technology. However, conventional memory device structures and fabrication process have significant limitations for high-density integration. Herein, this study reports the monolithically-integrated 1-selector and 1-resistive (1S1R) synaptic memory in van der Waals (vdW) heterostructure, which overcomes the conventional limitations of device integration technologies. Single-step direct synthesis of vdW heterostructure and its corresponding 1S1R cell is fabricated via plasma-enhanced lattice-distortion. Scanning-transmission electron microscopy, and X-ray photoelectron spectroscopy are correlatively applied to observe the effects of plasma-enhanced nano-crystallization of bulk vdW VSe2. Furthermore, bipolar resistive switching dynamics have been spatially resolved with conductive atomic force microscopy. Furthermore, the artificial vdW heterostructure exhibits the synaptic functionality with interfacial charge accumulation at the 2D/3D interface, enabling linear weight updates across multiple resistance states with minimal nonlinearity. In conclusion, it envision that the monolithically-integrated 1S1R cell can offers a systematic device platform for next-generation vdW electronics and its corresponding monolithic 3D integration. description_type: abstract lang: und ## Creator - name: Jinhyoung Lee role: author - name: Gunhyoung Kim role: author - name: Hyunho Seok role: author - name: Sujeong Han role: author - name: Hyunwoo Shim role: author - name: Yoonmi Cha role: author - name: Sihoon Son role: author - name: Hyunbin Choi role: author - name: Magdalena Grzeszczyk role: author - name: Aleksander Bogucki role: author - name: Yunseok Choi role: author - name: Seungil Kim role: author - name: Hyeonjeong Lee role: author - name: Chaerin Park role: author - name: Geonwook Kim role: author - name: Hosin Hwang role: author - name: Hyunho Kim role: author - name: Dongho Lee role: author - name: Seowoo Son role: author - name: Geumji Back role: author - name: Hyelim Shin role: author - name: Donghwan Choi role: author - name: Alexina Ollier role: author - name: Yeon‐Ji Kim role: author - name: Lei Fang role: author - name: Gyuho Han role: author - name: Goo‐Eun Jung role: author - name: Youngi Lee role: author - name: Hyeong‐U Kim role: author - name: Kenji Watanabe role: author orcid: https://orcid.org/0000-0003-3701-8119 organization: National Institute for Materials Science - name: Takashi Taniguchi role: author orcid: https://orcid.org/0000-0002-1467-3105 organization: National Institute for Materials Science - name: Sanghoon Bae role: author - name: Andreas Heinrich role: author - name: Won‐Jun Jang role: author - name: Taesung Kim role: author ## Contact agent ## Publisher organization: Wiley ## Managing organization ## Keyword - subject: 'synaptic memory
 ' schema: not_defined - subject: van der Waals heterostructure schema: not_defined - subject: nano-crystallization schema: not_defined ## Rights - identifier: https://creativecommons.org/licenses/by/4.0/ date_licensed: 2025-08-26 ## Other identifier(s) ## Data origin - data_origin_type: other ## Embargo ## Journal - title: Advanced Science issn: '21983844' volume: '12' issue: '43' article_number: e10961 ## Conference ## Related item ## Funding - identifier: IBS‐R027‐D1 funder_name: Institute for Basic Science - identifier: '1415187508' funder_name: Ministry of Trade, Industry and Energy - identifier: '1415187508' funder_name: Ministry of Trade, Industry and Energy - identifier: '1415187584' funder_name: Ministry of Trade, Industry and Energy - funder_name: National Research Foundation - identifier: RS‐2024‐00437142 funder_name: National Research Foundation of Korea - identifier: RS‐2023‐00235156 funder_name: Korea Semiconductor Research Consortium - identifier: '1415187508' funder_name: Ministry of Trade, Industry and Energy - identifier: '1415187508' funder_name: Ministry of Trade, Industry and Energy - identifier: '1415187584' funder_name: Ministry of Trade, Industry and Energy ## Instrument ## Instrument operator ## Instrument managing organization ## Measurement method ## Specimen ## Chemical composition ## Structure for specimen ## Structural feature for specimen ## Specific property for specimen ## Process for specimen treatment ## Computational method ## Energy level/transition state ## Software ## Custom property ## Fileset - id: 6d27989c-8890-4202-84ae-0fa41a992b67 filename: Advanced Science - 2025 - Lee - Monolithically‐Integrated van der Waals Synaptic Memory via Bulk Nano‐Crystallization.pdf content_type: application/pdf size: 3741918 md5: 817abc5bc57ab1c0622f9df7d5a3a258 ## Thumbnail fileset_id: 6d27989c-8890-4202-84ae-0fa41a992b67 filename: Advanced Science - 2025 - Lee - Monolithically‐Integrated van der Waals Synaptic Memory via Bulk Nano‐Crystallization.pdf