# P-Channel MOSFETs on Phosphorous-Doped n-Type Diamond

https://mdr.nims.go.jp/datasets/75e60b9b-47e1-4570-a367-022e4d668d65

## File

- [02-EDL-Manuscript　updated　20240417.pdf](https://mdr.nims.go.jp/filesets/58db0eee-7390-4d1f-ac82-c3cf467addba/download) ([Detail](https://mdr.nims.go.jp/filesets/58db0eee-7390-4d1f-ac82-c3cf467addba.md))

## Id

75e60b9b-47e1-4570-a367-022e4d668d65

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-11-29T06:00:27.377685Z

## Updated at

2024-12-05T03:47:42.916361Z

## Published at

2024-12-05T03:47:42.990584Z

## Doi

https://doi.org/10.48505/nims.5060

## First published url

https://doi.org/10.1109/led.2024.3485683

## Date published

2024-10-24

## Recorded date published



## Resource type

journal_article

## Manuscript type

authors_original

## Collection



## Title

- title: P-Channel MOSFETs on Phosphorous-Doped n-Type Diamond
  title_type: original
  lang: en

## Description

- description: P-channel metal-oxide-semiconductor fieldeffect transistors (MOSFETs)
    have been demonstrated on phosphorus-doped n-type diamond epilayers. The p-channel
    nature arises from the surface conductivity resulting from hydrogenated termination
    on the n-type diamond surface. The MOSFET exhibits normally-on properties and
    shows a threshold of 1.8 V for the phosphorus concentration of 1016 cm−3 and an
    on/off ratio of 107. The maximum drain current is approximately −4.5 mA/mm and
    the transconductance is 0.75 mS/mm, which decreases as the phosphorus concentration
    in the n-type diamond epilayer increases. The  emonstration of p-channel MOSFETs
    on n-type diamond epilayers paves the way for the development of complementary
    MOS (CMOS) circuits on a single diamond wafer.
  description_type: abstract
  lang: und

## Creator

- name: Wen Zhao
  role: author
  orcid: https://orcid.org/0000-0001-8159-8195
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Satoshi Koizumi
  role: author
  orcid: https://orcid.org/0000-0003-4961-5658
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Meiyong Liao
  role: author
  orcid: https://orcid.org/0000-0003-1361-4266
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26

## Contact agent



## Publisher

organization: Institute of Electrical and Electronics Engineers (IEEE)

## Managing organization



## Keyword

- subject: Diamond
  schema: not_defined
- subject: n-type
  schema: not_defined
- subject: transistor
  schema: not_defined

## Rights

- description: This work has been submitted to the IEEE for possible publication.
    Copyright may be transferred without notice, after which this version may no longer
    be accessible.
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: IEEE Electron Device Letters
  issn: '07413106'
  volume: '45'
  issue: '12'
  start_page: 2268
  end_page: 2271

## Conference



## Related item



## Funding



## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: 58db0eee-7390-4d1f-ac82-c3cf467addba
  filename: 02-EDL-Manuscript　updated　20240417.pdf
  content_type: application/pdf
  size: 667394
  md5: 2b7640d607895fcb98cce0eb30df9eae

## Thumbnail

fileset_id: 58db0eee-7390-4d1f-ac82-c3cf467addba
filename: 02-EDL-Manuscript　updated　20240417.pdf