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説明:

Tunneling light-emitting devices (LEDs) based on transition metal dichalcogenides (TMDs) and other 2D materials are a new platform for on-chip optoelectronic integration. Some of the physical processes underlying this LED architecture are not fully understood, especially the emission at photon energies higher than the applied electrostatic potential, so-called overbias emission. Here we report overbias emission for potentials that are near half of the optical bandgap energy in TMD- based tunneling LEDs. We show that this emission is not thermal in nature, but consistent with exciton generation via a two-electron coherent tunneling process.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Tunneling LEDs, transition metal dichalcogenides, overbias emission

刊行年月日: 2023-12-13

出版者: American Chemical Society (ACS)

掲載誌:

• Nano Letters (ISSN: 15306984) vol. 23 issue. 23 p. 10908-10913

研究助成金:

• Schweizerischer Nationalfonds zur F?rderung der Wissenschaftlichen Forschung 200020-192362/1
• Japan Society for the Promotion of Science 21H05233
• Japan Society for the Promotion of Science 19H05790
• Japan Society for the Promotion of Science 20H00354

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1021/acs.nanolett.3c03155

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更新時刻: 2025-02-14 16:31:06 +0900

MDRでの公開時刻: 2025-02-14 16:31:06 +0900