# Anisotropic non-plasma HCl gas etching of (010) β-Ga2O3 substrate

https://mdr.nims.go.jp/datasets/7454efb6-5194-4d17-bca8-18ba262be36e

## File

- [APEX-107351.docx](https://mdr.nims.go.jp/filesets/9a9ae61f-0484-4943-87a9-cfaa0766d3e4/download) ([Detail](https://mdr.nims.go.jp/filesets/9a9ae61f-0484-4943-87a9-cfaa0766d3e4.md))

## Id

7454efb6-5194-4d17-bca8-18ba262be36e

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2023-11-20T08:48:05.253733Z

## Updated at

2024-06-14T23:30:13.177695Z

## Published at

2024-06-14T23:30:13.279117Z

## Doi

https://doi.org/10.48505/nims.4267

## First published url

https://doi.org/10.35848/1882-0786/acdbb7

## Date published

2023-06-01

## Recorded date published

2023-6-1

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Anisotropic non-plasma HCl gas etching of (010) β-Ga2O3 substrate
  title_type: original
  lang: en

## Description

- description: We demonstrated the effectiveness of plasma-free HCl gas etching on
    a SiO2-masked (010) β-Ga2O3 substrate. The etching process proceeded anisotropically
    in the window areas, resulting in the fabrication of holes or trenches that were
    surrounded by etching-resistant (100)- and (-101)-faceted sidewalls. When we etched
    in the striped windows along [001], we were able to create fins and trenches with
    flat (100)-faceted vertical sidewalls and slightly-rough {310}-faceted inclined
    bottom corners. The vertical-to-horizontal etching ratio was as high as ~11–14.
    Our findings indicate that HCl etching is a promising method for fabricating high-aspect-ratio
    fins/trenches on (010) substrates without causing plasma damage.
  description_type: abstract
  lang: eng

## Creator

- name: Takayoshi Oshima
  role: author
  orcid: https://orcid.org/0000-0001-8550-9735
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Yuichi Oshima
  role: author
  orcid: https://orcid.org/0000-0001-8293-4891
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26

## Contact agent



## Publisher

organization: IOP Publishing

## Managing organization



## Keyword

- subject: Ga2O3
  schema: not_defined
- subject: HCl gas etching
  schema: not_defined

## Rights

- description: "© 2023 The Japan Society of Applied Physic <br>\r\nThis is an author-created,
    un-copyedited version of an article accepted for publication/published in Applied
    Physics Express. IOP Publishing Ltd is not responsible for any errors or omissions
    in this version of the manuscript or\r\nany version derived from it. The Version
    of Record is available online at https://doi.org/10.35848/1882-0786/acdbb7."
  identifier: https://creativecommons.org/licenses/by-nc-nd/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo

start_date: 2023-06-15
end_date: 2024-06-15

## Journal

- title: Applied Physics Express
  issn: '18820778'
  volume: '16'
  issue: '6'
  start_page: 66501
  end_page: 66501

## Conference



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## Funding

- funder_name: The Murata Science Foundation

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## Fileset

- id: 9a9ae61f-0484-4943-87a9-cfaa0766d3e4
  filename: APEX-107351.docx
  content_type: application/vnd.openxmlformats-officedocument.wordprocessingml.document
  size: 5905730
  md5: ea65d04e3ccc5ec9d27b0e35c1e24921

## Thumbnail

fileset_id: 9a9ae61f-0484-4943-87a9-cfaa0766d3e4
filename: APEX-107351.docx