# Laser ablation process of CsPbBr3 heterostructures for light-emitting diode applications

https://mdr.nims.go.jp/datasets/7435bc2a-f4cf-44fb-aa68-ce205ec76fc8

## File

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- [STAM-2025-0292_data.zip](https://mdr.nims.go.jp/filesets/befb84dc-07d9-46f3-a9da-7746a5166658/download) ([Detail](https://mdr.nims.go.jp/filesets/befb84dc-07d9-46f3-a9da-7746a5166658.md))

## Id

7435bc2a-f4cf-44fb-aa68-ce205ec76fc8

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-09-10T03:01:16.546539Z

## Updated at

2025-09-10T07:30:32.976203Z

## Published at

2025-09-10T07:19:33.301616Z

## Doi

https://doi.org/10.48505/nims.5747

## First published url

https://doi.org/10.1080/14686996.2025.2554045

## Date published

2025-12-31

## Recorded date published

2025-12-31

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Laser ablation process of CsPbBr3 heterostructures for light-emitting diode
    applications
  title_type: original
  lang: en

## Description

- description: We investigated a vacuum thin-film process using laser ablation to
    fabricate heterostructures of halide perovskite CsPbBr3 for light-emitting diode
    (LED) applications. A CsPbBr3 single crystal synthesized via inverse temperature
    crystallization was used as the target material for pulsed laser deposition. CsPbBr3
    films were deposited at 150°C, 200°C and 250°C. Structural and optical analysis
    has revealed that the optimum temperature is 200°C, which display the highest
    crystallinity and photoluminescence emission efficiency. Time-resolved microwave
    photoconductivity characterization revealed that the CsPbBr3 film exhibited a
    high effective mobility of 2.47 cm2/Vs and long photocarrier lifetime of 16.5 μs.
    The lifetime is comparable to that of bulk CsPbBr3 single crystals. This indicates
    that the polycrystalline CsPbBr3 film had a low density of defect structures that
    promote nonradiative recombination. Furthermore, we applied this process to fabricate
    a LED device using halide perovskite heterostructures. This resulted in a strong
    green electroluminescence emission. The laser ablation process using ultraviolet
    and infrared light is suitable for forming heterostructures with an electron transportation
    layer of oxide Mg0.3Zn0.7O film and a hole transportation layer of an organic
    α-NPD film. The film synthesis process is likely to be effective for evaluating
    heterointerfaces of various materials displaying remarkable crystallinity without
    exposure to air.
  description_type: abstract
  lang: en

## Creator

- name: Ryunosuke Kumagai
  role: author
  organization: Nihon University
  department: a College of Engineering, Department of Electrical and Electronic Engineering
- name: Ren Koguchi
  role: author
- name: Takuro Dazai
  role: author
- name: Toshihiro Sato
  role: author
- name: Hideomi Koinuma
  role: author
- name: Ryuzi Katoh
  role: author
- name: Ryota Takahashi
  role: author

## Contact agent



## Publisher

organization: Taylor & Francis

## Managing organization



## Keyword

- subject: Halide perovskite
  schema: not_defined
- subject: pulsed laser deposition
  schema: not_defined
- subject: time resolved microwave conductivity
  schema: not_defined
- subject: time resolved photoluminescence
  schema: not_defined
- subject: light emitting diode
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Science and Technology of Advanced Materials
  issn: '14686996'
  volume: '26'
  article_number: '2554045 '

## Conference



## Related item



## Funding



## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



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## Custom property



## Fileset

- id: 389f65c1-085e-41f5-87b4-166032f123f2
  filename: Kumagai_s.pdf
  content_type: application/pdf
  size: 875989
  md5: c826fe962f8e69a9a59df5fc45d01b65
- id: 4ffecf58-0691-4bcd-9a87-ed46d3af770b
  filename: Laser ablation process of CsPbBr3 heterostructures for light-emitting
    diode applications.pdf
  content_type: application/pdf
  size: 5346852
  md5: e1ad296a662481c2c248d1ebae309812
- id: befb84dc-07d9-46f3-a9da-7746a5166658
  filename: STAM-2025-0292_data.zip
  content_type: application/zip
  size: 666990
  md5: fc4fc192928ea48d3e8b3f5a265e746d

## Thumbnail

fileset_id: 389f65c1-085e-41f5-87b4-166032f123f2
filename: Kumagai_s.pdf