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We investigated a vacuum thin-film process using laser ablation to fabricate heterostructures of halide perovskite CsPbBr3 for light-emitting diode (LED) applications. A CsPbBr3 single crystal synthesized via inverse temperature crystallization was used as the target material for pulsed laser deposition. CsPbBr3 films were deposited at 150°C, 200°C and 250°C. Structural and optical analysis has revealed that the optimum temperature is 200°C, which display the highest crystallinity and photoluminescence emission efficiency. Time-resolved microwave photoconductivity characterization revealed that the CsPbBr3 film exhibited a high effective mobility of 2.47 cm2/Vs and long photocarrier lifetime of 16.5 μs. The lifetime is comparable to that of bulk CsPbBr3 single crystals. This indicates that the polycrystalline CsPbBr3 film had a low density of defect structures that promote nonradiative recombination. Furthermore, we applied this process to fabricate a LED device using halide perovskite heterostructures. This resulted in a strong green electroluminescence emission. The laser ablation process using ultraviolet and infrared light is suitable for forming heterostructures with an electron transportation layer of oxide Mg0.3Zn0.7O film and a hole transportation layer of an organic α-NPD film. The film synthesis process is likely to be effective for evaluating heterointerfaces of various materials displaying remarkable crystallinity without exposure to air.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Halide perovskite, pulsed laser deposition, time resolved microwave conductivity, time resolved photoluminescence, light emitting diode

刊行年月日: 2025-12-31

出版者: Taylor & Francis

掲載誌:

• Science and Technology of Advanced Materials (ISSN: 14686996) vol. 26 2554045

研究助成金:

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5747

公開URL: https://doi.org/10.1080/14686996.2025.2554045

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更新時刻: 2025-09-10 16:30:32 +0900

MDRでの公開時刻: 2025-09-10 16:19:33 +0900