# Plasma-free anisotropic selective-area etching of β-Ga            <sub>2</sub>            O            <sub>3</sub>            using forming gas under atmospheric pressure

https://mdr.nims.go.jp/datasets/73e55ce8-7a01-4ca9-a74d-46481247db58

## File

- [Plasma-free anisotropic selective-area etching of -Ga2O3 using forming gas under atmospheric pressure_organized.pdf](https://mdr.nims.go.jp/filesets/6b4ba7a6-3e20-4ccb-9ab7-4907b1a5a746/download) ([Detail](https://mdr.nims.go.jp/filesets/6b4ba7a6-3e20-4ccb-9ab7-4907b1a5a746.md))
- [tsta_a_2378683_sm7557.pdf](https://mdr.nims.go.jp/filesets/735336fd-8c40-497e-8231-fb4e3e3f81f1/download) ([Detail](https://mdr.nims.go.jp/filesets/735336fd-8c40-497e-8231-fb4e3e3f81f1.md))

## Id

73e55ce8-7a01-4ca9-a74d-46481247db58

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-07-31T00:08:39.806718Z

## Updated at

2024-07-31T03:30:20.461427Z

## Published at

2024-07-31T03:30:20.532575Z

## Doi



## First published url

https://doi.org/10.1080/14686996.2024.2378683

## Date published

2024-12-31

## Recorded date published

2024-12-31

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: |-
    Plasma-free anisotropic selective-area etching of β-Ga
                <sub>2</sub>
                O
                <sub>3</sub>
                using forming gas under atmospheric pressure
  title_type: original
  lang: en

## Description

- description: We demonstrate a facile and safe anisotropic gas etching technique
    for β-Ga2O3 under atmospheric pressure using forming gas, a H2/N2 gas mixture
    containing 3.96 vol% H2. This etching gas, being neither explosive nor toxic,
    can be safely exhausted into the atmosphere, simplifying the etching system setup.
    Thermodynamic calculations confirm the viability of gas-phase etching above 676°C
    without the formation of Ga droplets. Experimental verification was achieved by
    etching (-102) β-Ga2O3 substrates within a temperature range of 700–950°C. Moreover,
    selective-area etching using this method yielded trenches and fins with vertical
    and flat sidewalls, defined by (100) facets with the lowest surface energy density,
    demonstrating significant anisotropic etching capability.
  description_type: abstract
  lang: und

## Creator

- name: Takayoshi Oshima
  role: author
  orcid: https://orcid.org/0000-0001-8550-9735
- name: Rie Togashi
  role: author
  orcid: https://orcid.org/0000-0002-9467-0755
- name: Yuichi Oshima
  role: author
  orcid: https://orcid.org/0000-0001-8293-4891

## Contact agent



## Publisher

organization: Informa UK Limited

## Managing organization



## Keyword

- subject: Ga2O3
  schema: not_defined
- subject: forming gas
  schema: not_defined
- subject: anisotropic etching
  schema: not_defined
- subject: plasma-free process
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin



## Embargo



## Journal

- title: Science and Technology of Advanced Materials
  issn: '14686996'
  volume: '25'
  issue: '1'

## Conference



## Related item



## Funding

- funder_name: TEPCO Memorial Foundation

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: 6b4ba7a6-3e20-4ccb-9ab7-4907b1a5a746
  filename: Plasma-free anisotropic selective-area etching of -Ga2O3 using forming
    gas under atmospheric pressure_organized.pdf
  content_type: application/pdf
  size: 4072376
  md5: 5e9f3ac0537979673cd7601888bf03e5
- id: 735336fd-8c40-497e-8231-fb4e3e3f81f1
  filename: tsta_a_2378683_sm7557.pdf
  content_type: application/pdf
  size: 440927
  md5: 2c7767b187a754005951bbb3a2f0aa37

## Thumbnail

fileset_id: 6b4ba7a6-3e20-4ccb-9ab7-4907b1a5a746
filename: Plasma-free anisotropic selective-area etching of -Ga2O3 using forming gas
  under atmospheric pressure_organized.pdf