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説明:

We have investigated atomic and electronic structure of grain boundaries in monolayer MoS2, where relative angles between two different grains are 0 and 60 degree. The grain boundaries with specific relative angle have been formed with CVD growth on graphite and hBN flakes; van der Waals interlayer interaction between MoS2 and the flakes restricts the relative angle. Through scanning tunneling microscopy and spectroscopy measurements, we have found that the perfectly stitched structure between two different grains of MoS2 was realized in the case of the 0 degree grain boundary. We also found that even with the perfectly stitched structure, valence band maximum and conduction band minimum shows significant blue shift, which probably arise from lattice strain at the boundary.

権利情報:

• cc-by-3.0
  

キーワード: Grain boundaries, monolayer MoS2, scanning tunneling microscopy

刊行年月日: 2019-04-17

出版者: Frontiers Media SA

掲載誌:

• Frontiers in Physics (ISSN: 2296424X) vol. 7

研究助成金:

• Japan Society for the Promotion of Science

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.3389/fphy.2019.00059

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更新時刻: 2025-02-23 22:49:14 +0900

MDRでの公開時刻: 2025-02-23 22:49:14 +0900