# In-plane orientation control of (001) κ-Ga2O3 by epitaxial lateral overgrowth through a geometrical natural selection mechanism

https://mdr.nims.go.jp/datasets/734156cb-426d-49f7-a922-b329939b2b93

## File

- [Manuscript clean source file (K-ELO)Oshima.pdf](https://mdr.nims.go.jp/filesets/30c9f141-4d5c-4981-87c9-279782a80eed/download) ([Detail](https://mdr.nims.go.jp/filesets/30c9f141-4d5c-4981-87c9-279782a80eed.md))

## Id

734156cb-426d-49f7-a922-b329939b2b93

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-01-07T06:08:53.485305Z

## Updated at

2024-01-22T00:39:14.741164Z

## Published at

2024-01-22T03:30:13.811180Z

## Doi

https://doi.org/10.48505/nims.4536

## First published url

https://doi.org/10.35848/1347-4065/abbc57

## Date published

2020-11-01

## Recorded date published

2020-11-1

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: 選択横方向成長による幾何学的自然淘汰機構を利用した (001) κ-Ga2O3の面内配向制御
  title_type: alternative
  lang: ja
- title: In-plane orientation control of (001) κ-Ga2O3 by epitaxial lateral overgrowth
    through a geometrical natural selection mechanism
  title_type: original
  lang: en

## Description

- description: The present work demonstrates a new technique to solve the in-plane
    rotational domain problem. In the technique, κ-Ga2O3 was grown by epitaxial lateral
    overgrowth. An SiOx mask with stripe or dotted-stripe pattern was aligned on a
    c-plane sapphire substrate with a TiOx buffer layer so that the stripe was parallel
    to [11-20 ] direction of sapphire. κ-Ga2O3 was then grown on the substrate by
    halide vapor phase epitaxy. Electron backscattered diffraction, XRD, Transmission
    electron microscopy, and selective area electron diffraction revealed that the
    in-plane three orientations of κ-Ga2O3 domains converged to just one of them whose
    [010] direction was perpendicular to the stripe. The convergence occurred through
    natural selection mechanism due to anisotropy of in-plane growth rate.
  description_type: abstract
  lang: eng

## Creator

- name: Yuichi Oshima
  role: author
  orcid: https://orcid.org/0000-0001-8293-4891
- name: Katsuaki Kawara
  role: author
- name: Takayoshi Oshima
  role: author
- name: Takashi Shinohe
  role: author

## Contact agent



## Publisher

organization: IOP Publishing

## Managing organization



## Keyword

- subject: κ-Ga2O3
  schema: not_defined
- subject: ε-Ga2O3
  schema: not_defined
- subject: ELO
  schema: not_defined
- subject: domain
  schema: not_defined
- subject: HVPE
  schema: not_defined

## Rights

- description: "© 2020 The Japan Society of Applied Physics<br>\r\nThis is an author-created,
    un-copyedited version of an article accepted for publication/published\r\nin Japanese
    Journal of Applied Physics. IOP Publishing Ltd is not responsible for any errors
    or omissions in this version of the manuscript or any version derived from it.
    The Version of Record is available online at https://doi.org/10.35848/1347-4065/abbc57."
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: JAPANESE JOURNAL OF APPLIED PHYSICS
  issn: '00214922'
  volume: '59'
  issue: '11'
  start_page: 115501
  end_page: 115501

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## Specimen



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## Fileset

- id: 30c9f141-4d5c-4981-87c9-279782a80eed
  filename: Manuscript clean source file (K-ELO)Oshima.pdf
  content_type: application/pdf
  size: 1550954
  md5: 9ac9918092d4463b194f8e56fc24c4ef

## Thumbnail

fileset_id: 30c9f141-4d5c-4981-87c9-279782a80eed
filename: Manuscript clean source file (K-ELO)Oshima.pdf