# Van der Waals polarity-engineered 3D integration of 2D complementary logic https://mdr.nims.go.jp/datasets/727a1add-801f-4264-9ea0-40ab08db3819 ## File - [s41586-024-07438-5.pdf](https://mdr.nims.go.jp/filesets/748c7f00-22f5-47d0-8042-11a0d8780083/download) ([Detail](https://mdr.nims.go.jp/filesets/748c7f00-22f5-47d0-8042-11a0d8780083.md)) ## Id 727a1add-801f-4264-9ea0-40ab08db3819 ## Local identifier ## Visibility open_to_public ## State published ## Created at 2025-08-01T06:41:34.334306Z ## Updated at 2025-08-01T23:30:31.934331Z ## Published at 2025-08-01T23:17:30.680243Z ## Doi ## First published url https://doi.org/10.1038/s41586-024-07438-5 ## Date published 2024-06-13 ## Recorded date published 2024-6-13 ## Resource type journal_article ## Manuscript type vor ## Collection ## Title - title: Van der Waals polarity-engineered 3D integration of 2D complementary logic title_type: original lang: en ## Description - description: Vertical three-dimensional integration of two-dimensional (2D) semiconductors holds great promise, as it offers the possibility to scale up logic layers in the z axis1,2,3. Indeed, vertical complementary field-effect transistors (CFETs) built with such mixed-dimensional heterostructures4,5, as well as hetero-2D layers with different carrier types6,7,8, have been demonstrated recently. However, so far, the lack of a controllable doping scheme (especially p-doped WSe2 (refs. 9,10,11,12,13,14,15,16,17) and MoS2 (refs. 11,18,19,20,21,22,23,24,25,26,27,28)) in 2D semiconductors, preferably in a stable and non-destructive manner, has greatly impeded the bottom-up scaling of complementary logic circuitries. Here we show that, by bringing transition metal dichalcogenides, such as MoS2, atop a van der Waals (vdW) antiferromagnetic insulator chromium oxychloride (CrOCl), the carrier polarity in MoS2 can be readily reconfigured from n- to p-type via strong vdW interfacial coupling. The consequential band alignment yields transistors with room-temperature hole mobilities up to approximately 425 cm2 V−1 s−1, on/off ratios reaching 106 and air-stable performance for over one year. Based on this approach, vertically constructed complementary logic, including inverters with 6 vdW layers, NANDs with 14 vdW layers and SRAMs with 14 vdW layers, are further demonstrated. Our findings of polarity-engineered p- and n-type 2D semiconductor channels with and without vdW intercalation are robust and universal to various materials and thus may throw light on future three-dimensional vertically integrated circuits based on 2D logic gates. description_type: abstract lang: en ## Creator - name: Yimeng Guo role: author - name: Jiangxu Li role: author - name: Xuepeng Zhan role: author - name: Chunwen Wang role: author - name: Min Li role: author - name: Biao Zhang role: author - name: Zirui Wang role: author - name: Yueyang Liu role: author - name: Kaining Yang role: author - name: Hai Wang role: author - name: Wanying Li role: author - name: Pingfan Gu role: author - name: Zhaoping Luo role: author - name: Yingjia Liu role: author - name: Peitao Liu role: author - name: Bo Chen role: author - name: Kenji Watanabe role: author orcid: https://orcid.org/0000-0003-3701-8119 organization: National Institute for Materials Science - name: Takashi Taniguchi role: author orcid: https://orcid.org/0000-0002-1467-3105 organization: National Institute for Materials Science - name: Xing-Qiu Chen role: author - name: Chengbing Qin role: author - name: Jiezhi Chen role: author - name: Dongming Sun role: author - name: Jing Zhang role: author - name: Runsheng Wang role: author - name: Jianpeng Liu role: author - name: Yu Ye role: author - name: Xiuyan Li role: author - name: Yanglong Hou role: author - name: Wu Zhou role: author - name: Hanwen Wang role: author - name: Zheng Han role: author ## Contact agent ## Publisher organization: Springer Science and Business Media LLC ## Managing organization ## Keyword - subject: Polarity Engineering of 2D Semiconductors schema: not_defined - subject: Vertically Integrated Logic Circuits schema: not_defined - subject: van der Waals Interfacial Coupling schema: not_defined ## Rights - identifier: https://creativecommons.org/licenses/by/4.0/ ## Other identifier(s) ## Data origin - data_origin_type: other ## Embargo ## Journal - title: Nature issn: '00280836' volume: '630' issue: '8016' start_page: 346 end_page: 352 ## Conference ## Related item ## Funding ## Instrument ## Instrument operator ## Instrument managing organization ## Measurement method ## Specimen ## Chemical composition ## Structure for specimen ## Structural feature for specimen ## Specific property for specimen ## Process for specimen treatment ## Computational method ## Energy level/transition state ## Software ## Custom property ## Fileset - id: 748c7f00-22f5-47d0-8042-11a0d8780083 filename: s41586-024-07438-5.pdf content_type: application/pdf size: 16462841 md5: bcd00d5e16ca6540d374557913c86ef8 ## Thumbnail fileset_id: 748c7f00-22f5-47d0-8042-11a0d8780083 filename: s41586-024-07438-5.pdf