# Raw data files for Fig. 7 Auger depth profiles in "Auger Depth Profiling Analysis of HfO2/Si Specimen Using an Ultra Low Angle Incidence Ion Beam"

https://mdr.nims.go.jp/datasets/71e87847-79fe-46c3-9c70-8c9d54c2b4d6

## Download

- [data-137-raw-data-all.zip](https://mdr.nims.go.jp/filesets/78b92a18-08f8-4ce3-ba1b-99d8e1961735/download)
- [HfO2-Fig7-Work-20221213.pdf](https://mdr.nims.go.jp/filesets/fa2b1301-21f8-4b29-8483-0df6ad4b06bb/download)

## Id

71e87847-79fe-46c3-9c70-8c9d54c2b4d6

## Local identifier

identifier: b3d30828-9e77-42a5-8d5b-2a8ac72e6262/MDR_ogiwara_fig7_1219-2

## Visibility

open_to_public

## State

published

## Created at

2022-12-19T01:49:33.657006Z

## Updated at

2024-01-05T13:12:25.135706Z

## Published at

2022-12-19T02:38:00.809927Z

## Doi

https://doi.org/10.48505/nims.3843

## First published url

https://doi.org/10.1384/jsa.24.192

## Date published

2019-03-07

## Recorded date published

2018

## Resource type

dataset

## Manuscript type

na

## Collection



## Title

- title: Raw data files for Fig. 7 Auger depth profiles in "Auger Depth Profiling
    Analysis of HfO2/Si Specimen Using an Ultra Low Angle Incidence Ion Beam"
  title_type: original
  lang: und
- title: "“極低角度入射ビームオージェ深さ方向分析によるHfO2/Si基板の分析”の Raw data ファイル"
  title_type: alternative
  lang: und

## Description

- description: We have investigated the Auger depth profiling analysis of HfO2/Si
    by the glancing-angle ion beam sputtering method at an incident angle of 7 degree
    from the sample surface with argon ion beam. The depth resolutions of the O KLL
    interface profiles were 0.9 nm and 1.5 nm, at the ion-beam acceleration voltage
    of 2.0 kV and 3.0 kV re-spectively, which were better than the depth resolutions
    at a commonly-used incident angle of 51 degree. However, the ion-beam-induced
    reduction of HfO2 was not suppressed by the glancing-angle ion beam sputtering
    at the ion acceleration voltage of 0.5 kV, which is expected to be the lowest
    damage sputtering condition in this study. The reduction of HfO2 due to preferential
    sputtering of oxygen was observed by the intensity ratio of O KLL and Hf NVV depth
    profiles. It was found that the ratio of preferential sputtering depends on the
    ion incidence angle and the ion acceleration voltage. Under the glancing-angle
    condition, the ratio of preferential sputtering greatly de-pended on the ion accelerating
    voltage, and it was found that the lower the ion acceleration voltage is, the
    easier it is for O to be sputtered than Hf. On the other hand, under the commonly-used
    incident angle conditions, the ratio of preferential sputtering did not depend
    much on the ion acceleration voltage. The dependency of the ratio of preferential
    sputtering on the ion incidence angle can be explained by the difference in sputtering
    models depend-ing on the ion incidence angle. It was found that the O KLL depth
    profiles showed partial recovery of the oxygen intensity near the interface of
    HfO2/Si, which can be related to oxygen generated by the ion-beam-induced decom-position
    of the diffusion layer at the interface. In addition, the glancing-angle ion beam
    enables the reduction of the effect of recoil implantation of Hf atoms into the
    Si substrate.
  description_type: abstract
  lang: und

## Creator

- name: OGIWARA, Toshiya
  role: author
  orcid: https://orcid.org/0000-0002-7376-6571
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: NAGATA, Takahiro
  role: author
  orcid: https://orcid.org/0000-0002-8591-2943
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: YOSHIKAWA, Hideki
  role: author
  orcid: https://orcid.org/0000-0002-7389-8865
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26

## Contact agent



## Publisher



## Managing organization

organization: National Institute for Materials Science
department: DPFC
ror: https://ror.org/026v1ze26

## Keyword

- subject: Auger depth profiling analysis
  schema: not_defined
- subject: HfO2/Si
  schema: not_defined
- subject: Ultra low angle incidence ion beam
  schema: not_defined

## Rights

- description: In Copyright
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: experiment

## Embargo



## Journal



## Conference



## Related item

- title: Auger Depth Profiling Analysis of HfO2/Si Specimen Using an Ultra Low Angle
    Incidence Ion Beam
  identifier: https://doi.org/10.1384/jsa.24.192
  identifier_type: DOI
  relation_type: is_supplement_to
  related_item_type: dataset

## Funding



## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method

- category_description: spectroscopy

## Specimen

- name: HfO2/Si

## Chemical composition

- description: HfO2/Si

## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: 78b92a18-08f8-4ce3-ba1b-99d8e1961735
  filename: data-137-raw-data-all.zip
  content_type: application/zip
  size: 1011998
  md5: 3c76fc680cb5927d16ce18094d54774a
- id: fa2b1301-21f8-4b29-8483-0df6ad4b06bb
  filename: HfO2-Fig7-Work-20221213.pdf
  content_type: application/pdf
  size: 265653
  md5: 9dc309980bd021215f165692ac0e02b2

## Thumbnail

fileset_id: fa2b1301-21f8-4b29-8483-0df6ad4b06bb
filename: HfO2-Fig7-Work-20221213.pdf