# Anisotropic charge transport at the metallic edge contact of ReS2 field effect transistors

https://mdr.nims.go.jp/datasets/71ad30ca-338e-4bd3-8d9e-9c567b7ffd52

## File

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## Id

71ad30ca-338e-4bd3-8d9e-9c567b7ffd52

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-02-14T01:58:14.818308Z

## Updated at

2025-02-14T03:32:15.713836Z

## Published at

2025-02-14T03:32:15.813816Z

## Doi



## First published url

https://doi.org/10.1038/s43246-024-00526-z

## Date published

2024-05-28

## Recorded date published



## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Anisotropic charge transport at the metallic edge contact of ReS2 field effect
    transistors
  title_type: original
  lang: en

## Description

- description: The in-plane anisotropy of electrical conductance in two-dimensional
    (2D) materials has garnered significant attention due to its potential in emerging
    device applications, offering an additional dimension to control carrier transport
    in 2D devices. However, previous research has primarily focused on the anisotropy
    within the electrical channel, neglecting the significant impact of anisotropic
    electrical contacts of 2D materials. Here, we investigate anisotropic charge transport
    at the metal contacts of hBN-encapsulated ReS2 using edge-contacted FETs. We observed
    the marked difference in contact resistance between the cross-b and b directions,
    suggesting that charge transport from the metal to ReS2 is significantly more
    efficient along the b direction. This difference in efficiency results in a substantial
    contact anisotropy, reaching ~ 70 at 77K. Our findings indicate that the measured
    SBH along the b direction is ~ 35 meV, which is smaller than along the cross-b
    direction. Moreover, the tunneling probability along the b direction is two timeslarger
    than along the cross-b direction. Our results indicate that both SBH and tunneling
    amplitude are the primary contributors to the high contact anisotropy of ReS2.
    This work provides a valuable guideline for understanding how in-plane orientation
    influences charge transport at metallic contacts in 2D devices.
  description_type: abstract
  lang: und

## Creator

- name: Hyokwang Park
  role: author
- name: Myeongjin Lee
  role: author
- name: Xinbiao Wang
  role: author
- name: Nasir Ali
  role: author
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Euyheon Hwang
  role: author
- name: Won Jong Yoo
  role: author

## Contact agent



## Publisher

organization: Springer Science and Business Media LLC

## Managing organization



## Keyword

- subject: Electrical conductance
  schema: not_defined
- subject: anisotropic contacts
  schema: not_defined
- subject: ReS2
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Communications Materials
  issn: '26624443'
  volume: '5'
  issue: '1'
  article_number: '87'

## Conference



## Related item



## Funding

- identifier: '20022369'
  funder_name: Ministry of Trade, Industry and Energy
- identifier: 2021R1A2C1012176
  funder_name: National Research Foundation of Korea

## Instrument



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## Fileset

- id: e8260bb5-91d8-4ffb-81c0-60f2ed2a24d8
  filename: s43246-024-00526-z.pdf
  content_type: application/pdf
  size: 1862114
  md5: 43ddf4ab27e3a06b50da67b28142b4a5

## Thumbnail

fileset_id: e8260bb5-91d8-4ffb-81c0-60f2ed2a24d8
filename: s43246-024-00526-z.pdf