説明:
(abstract)We report a direct observation of the electronic structure of monolayer SnTe on graphene by angle-resolved photoemission spectroscopy. By combining low-energy electron diffraction, momentum microscopy, core-level spectroscopy, and first-principles calculations, we show that the observed monolayer-limit electronic structure is consistent with a puckered even-layer biatomic-layer building block rather than a nonpuckered square-flat structure. The observed band dispersion and its polarization dependence are reproduced by a puckered structure with a substrate-renormalized buckling amplitude. We further show that graphene actively interacts with ultrathin SnTe by selecting its in-plane orientational texture, renormalizing the buckling amplitude, and modifying the local interfacial electrostatic environment in the monolayer limit. In comparison, multilayer SnTe exhibits a more ringlike momentum-space distribution, interlayer-split valence bands, and a stronger 𝑝-type character, revealing the onset of thickness evolution from an interface-stabilized puckered ultrathin limit toward a more bulklike state.
権利情報:
©2026 American Physical Society
キーワード: Ferroelectricity, Two-dimensional materials, Angle-resolved photoemission spectroscopy
刊行年月日: 2026-09-08
出版者: American Physical Society (APS)
掲載誌:
研究助成金:
原稿種別: 著者最終稿 (Accepted manuscript)
MDR DOI: https://doi.org/10.48505/nims.8632
公開URL: https://doi.org/10.1103/p3hj-vdc2
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その他の識別子:
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更新時刻: 2026-10-01 08:38:11 +0900
MDRでの公開時刻: 2026-10-01 10:40:56 +0900
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SnTe_PRB_AAM_MDR_FINAL.pdf
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サイズ | 2.51MB | 詳細 |