# Stepwise Engineering of Van der Waals Heterostructures for High Current Density in Light Emitting Devices

https://mdr.nims.go.jp/datasets/70b1aa19-c824-4798-84b5-d8fb40153e87

## File

- [Adv Elect Materials - 2026 - Usami - Stepwise Engineering of Van der Waals Heterostructures for High Current Density in.pdf](https://mdr.nims.go.jp/filesets/0d57661b-54b9-463d-a6f9-155d93ae25a3/download) ([Detail](https://mdr.nims.go.jp/filesets/0d57661b-54b9-463d-a6f9-155d93ae25a3.md))

## Id

70b1aa19-c824-4798-84b5-d8fb40153e87

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2026-10-20T07:10:13.866066Z

## Updated at

2026-10-20T23:30:31.684896Z

## Published at

2026-10-20T09:29:42.318447Z

## Doi



## First published url

https://doi.org/10.1002/aelm.202400930

## Date published

2026-06-01

## Recorded date published

2026-8

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Stepwise Engineering of Van der Waals Heterostructures for High Current Density
    in Light Emitting Devices
  title_type: original
  lang: en

## Description

- description: Van der Waals (vdW) heterostructures of transition metal dichalcogenides
    (TMDs) have been widely employed in optoelectronic applications, including photodetectors,
    photovoltaic cells, and light-emitting devices (LEDs). Among these, PN-junction-based
    heterostructures are critical for advanced LED and laser applications, where achieving
    high current density is essential. However, the development of PN-junction-type
    LEDs using vdW heterostructures has been significantly hindered by the lack of
    effective doping techniques, resulting in devices with limited current densities.
    In this study, we propose a novel strategy for high-density carrier doping and
    reduced device resistance in vdW heterostructures by combining stepwise engineering
    of vdW stacking with electric double-layer (EDL) carrier doping. The stepwise-engineered
    heterostructure, based on WS₂/WSe₂, takes advantage of this configuration to facilitate
    efficient charge transport and enhanced carrier injection, as both P-type and
    N-type materials are in direct contact with the electrolyte, enabling high-density
    doping in both materials. Through EDL doping, clear electroluminescence was observed
    at the interface, with a peak current density of 9.4 × 10⁴ A/cm². This result
    marks a significant advancement over previous reports, demonstrating a promising
    pathway toward vdW heterostructure-based laser applications.
  description_type: abstract
  lang: und

## Creator

- name: Rei Usami
  role: author
- name: Koshi Oi
  role: author
- name: Keisuke Yamada
  role: author
- name: Jiang Pu
  role: author
- name: Hao Ou
  role: author
- name: Takahiko Endo
  role: author
- name: Yasumitsu Miyata
  role: author
  orcid: https://orcid.org/0000-0002-9733-5119
- name: Taishi Takenobu
  role: author
  orcid: https://orcid.org/0000-0001-7313-6396

## Contact agent



## Publisher

organization: Wiley

## Managing organization



## Keyword

- subject: Light Emitting Devices
  schema: not_defined
- subject: Van der Waals Heterostructures
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin



## Embargo



## Journal

- title: Advanced Electronic Materials
  issn: 2199160X
  volume: '12'
  issue: '16'
  article_number: e00930

## Conference



## Related item



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## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



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## Fileset

- id: 0d57661b-54b9-463d-a6f9-155d93ae25a3
  filename: Adv Elect Materials - 2026 - Usami - Stepwise Engineering of Van der Waals
    Heterostructures for High Current Density in.pdf
  content_type: application/pdf
  size: 1377000
  md5: 44d91bb0eea6f32b831dddfeea9465ab

## Thumbnail

fileset_id: 0d57661b-54b9-463d-a6f9-155d93ae25a3
filename: Adv Elect Materials - 2026 - Usami - Stepwise Engineering of Van der Waals
  Heterostructures for High Current Density in.pdf