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Van der Waals (vdW) heterostructures of transition metal dichalcogenides (TMDs) have been widely employed in optoelectronic applications, including photodetectors, photovoltaic cells, and light-emitting devices (LEDs). Among these, PN-junction-based heterostructures are critical for advanced LED and laser applications, where achieving high current density is essential. However, the development of PN-junction-type LEDs using vdW heterostructures has been significantly hindered by the lack of effective doping techniques, resulting in devices with limited current densities. In this study, we propose a novel strategy for high-density carrier doping and reduced device resistance in vdW heterostructures by combining stepwise engineering of vdW stacking with electric double-layer (EDL) carrier doping. The stepwise-engineered heterostructure, based on WS₂/WSe₂, takes advantage of this configuration to facilitate efficient charge transport and enhanced carrier injection, as both P-type and N-type materials are in direct contact with the electrolyte, enabling high-density doping in both materials. Through EDL doping, clear electroluminescence was observed at the interface, with a peak current density of 9.4 × 10⁴ A/cm². This result marks a significant advancement over previous reports, demonstrating a promising pathway toward vdW heterostructure-based laser applications.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Light Emitting Devices, Van der Waals Heterostructures

刊行年月日: 2026-06-01

出版者: Wiley

掲載誌:

• Advanced Electronic Materials (ISSN: 2199160X) vol. 12 issue. 16 e00930

研究助成金:

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1002/aelm.202400930

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更新時刻: 2026-10-21 08:30:31 +0900

MDRでの公開時刻: 2026-10-20 18:29:42 +0900