# Boron-doped diamond MOSFETs operating at temperatures up to 400°C

https://mdr.nims.go.jp/datasets/70723897-08fb-4c73-8315-f8b4a36be0e6

## File

- [manuscript.pdf](https://mdr.nims.go.jp/filesets/6c79da4e-2b46-463a-80f0-95c883159b58/download) ([Detail](https://mdr.nims.go.jp/filesets/6c79da4e-2b46-463a-80f0-95c883159b58.md))

## Id

70723897-08fb-4c73-8315-f8b4a36be0e6

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-03-05T01:49:54.667077Z

## Updated at

2025-03-05T07:30:11.308064Z

## Published at

2025-03-05T07:30:12.383023Z

## Doi

https://doi.org/10.48505/nims.5356

## First published url

https://doi.org/10.1080/26941112.2025.2450513

## Date published

2025-12-31

## Recorded date published

2025-12-31

## Resource type

journal_article

## Manuscript type

authors_original

## Collection



## Title

- title: Boron-doped diamond MOSFETs operating at temperatures up to 400°C
  title_type: original
  lang: en

## Description

- description: 'The boron-doped diamond (B-diamond) metal-oxide-semiconductor field-effect
    transistors (MOSFETs) are fabricated and characterized at operating temperatures
    up to 400 ℃. The SiO2 serves as the gate oxide insulator, while the Ti/Pt bilayer
    is employed as the gate contact metal. As the operating temperature rises from
    room temperature (RT) to 400 ℃, the absolute drain current for the B-diamond MOSFET
    increases from 3.9 μA mm-1 to 177.4 μA mm-1. Conversely, the on-resistance decreases
    significantly from 1469.8 kΩ mm to 16.5 kΩ mm. The on/off ratio for the MOSFET
    at RT is 1.9 × 105, which increases to over 5.0 × 106 at temperatures exceeding
    100 ℃. The threshold voltage exhibits a decreasing trend, though it deviates from
    this trend at 300 ℃. The subthreshold voltage and extrinsic transconductance maximum
    show increasing trends from 113 mV dec-1 to 299 mV dec-1 and from 0.9 μS mm-1
    to 23.1 μS mm-1, respectively. The interfacial trapped charge density is found
    to be stable in the range of 8.0 × 1011 ~ 2.3 × 1012 eV-1 cm-2. '
  description_type: abstract
  lang: und

## Creator

- name: Jiangwei Liu
  role: author
  orcid: https://orcid.org/0000-0003-2580-7401
- name: Tokuyuki Teraji
  role: author
  orcid: https://orcid.org/0000-0002-7731-0547
- name: Bo Da
  role: author
  orcid: https://orcid.org/0000-0002-0785-8662
- name: Yasuo Koide
  role: author
  orcid: https://orcid.org/0000-0001-8321-9822

## Contact agent



## Publisher

organization: Informa UK Limited

## Managing organization



## Keyword

- subject: Boron-doped diamond
  schema: not_defined

## Rights

- description: 'This is an original manuscript of an article published by Taylor &
    Francis in Functional Diamond on Jan. 19, 2025, available at: https://doi.org/10.1080/26941112.2025.2450513.'
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Functional Diamond
  issn: '26941112'
  volume: '5'
  issue: '1'

## Conference



## Related item



## Funding

- funder_name: Ministry of Education, Culture, Sports, Science and Technology

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: 6c79da4e-2b46-463a-80f0-95c883159b58
  filename: manuscript.pdf
  content_type: application/pdf
  size: 687564
  md5: 8490ad7fade4f4a767536d8b4fa75d2d

## Thumbnail

fileset_id: 6c79da4e-2b46-463a-80f0-95c883159b58
filename: manuscript.pdf