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説明:

Topological materials attract a considerable research interest because of their
characteristic band structure giving rise to various new phenomena in quantum physics.
Beside this, they are tempting from a functional materials point of view: Topological
materials bear potential for an enhanced thermoelectric efficiency because they possess
the required ingredients, such as intermediate carrier concentrations, large mobilities,
heavy elements etc. Against this background, this work reports an enhanced
thermoelectric performance of the topological Dirac semimetal Cd 3 As 2 upon alloying
the trivial semiconductor Zn 3 As 2 . This allows to gain fine-tuned control over both the
band filling and the band topology in Cd 3−x Zn x As 2 . As a result, the thermoelectric
figure of merit exceeds 0.5 around x = 0.6 and x =1.2 at elevated temperatures. The
former is due to an enhancement of the power factor, while the latter is a consequence of
a strong suppression of the thermal conductivity. In addition, in terms of first-principle
band structure calculations, the thermopower in this system is theoretically evaluated,
which suggests that the topological aspects of the band structure change when traversing
x =1.2 .

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: thermoelectric materials, figure of merit, band structure engineering, band filling, irac semimetal, Cd 3 As 2

刊行年月日: 2024-12-31

出版者: Taylor & Francis

掲載誌:

• Science and Technology of Advanced Materials (ISSN: 14686996) vol. 25 issue. 1 2412971

研究助成金:

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5374

公開URL: https://doi.org/10.1080/14686996.2024.2412971

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更新時刻: 2025-07-16 16:17:03 +0900

MDRでの公開時刻: 2025-03-26 17:26:34 +0900