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The progress of tin-based halide perovskite solar cells (Sn-HaPSCs) is obstructed by their poor stability arising from tin oxidation. Herein, we introduced phenethylammonium thiocyanate (PEASCN) as a pseudohalide functional additive into an FASnI3 perovskite film to improve the optoelectronic properties. This approach is found to be effective for the suppression of Sn oxidation and the formation of a compact and larger grain film with a higher degree of crystallinity. The device with the PEASCN additive improved the device efficiency from 4.52% (for pristine Sn-HaP) to 9.65% with a significant increase of VOC from ∼0.411 to 0.667 V and superior device stability. The device analysis revealed that the PEASCN additive has improved the optoelectronic properties coupled with a higher diffusion potential and suppression of bulk and interface defects in the Sn-HaPSC. This work corroborates that the incorporation of a pseudohalide-based functional additive in FASnI3 is propitious for better film formation, passivation of detrimental surface chemistry, and defects at the interface and in the bulk.

権利情報:

• In Copyright
  

  This document is the unedited Author’s version of a Submitted Work that was subsequently accepted for publication in ACS Applied Energy Materials, copyright © 2021 American Chemical Society after peer review. To access the final edited and published work see https://doi.org/10.1021/acsaem.1c02496.

キーワード: Tin perovskite, lead free, tin oxidation, device stability, pseudohalide, defect profile

刊行年月日: 2021-11-22

出版者: American Chemical Society (ACS)

掲載誌:

• ACS Applied Energy Materials (ISSN: 25740962) vol. 4 issue. 11 p. 12819-12826

研究助成金:

• Yazaki Memorial Foundation for Science and Technology

原稿種別: 査読前原稿 (Author's original)

MDR DOI: https://doi.org/10.48505/nims.5056

公開URL: https://doi.org/10.1021/acsaem.1c02496

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更新時刻: 2024-11-29 16:31:44 +0900

MDRでの公開時刻: 2024-11-29 16:31:44 +0900